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USAOACS  Technical  Library 


5 0712  01014934  1 


Research  and  Development  Technical  Report 


ECOM-  74-01  04-F 


technical 

LIBRARY 


EVALUATION  OF  Nd:YVO,  AND  Ho:Er:Tm:  YVO,  AS 

4 4 

PULSE  PUMPED  Q-SWITCHED  LASERS 


M.  Bass 

L.  G.  DeShazer 

P.  P.  Yaney 

Center  for  Laser  Studies 

University  of  Southern  California 

Los  Angeles,  California  90007 


I January  1976 

• Final  Report  for  Period  1 January  1974  - 1 April,  1975 

• Distribution  Statement 

• 

t Approved  for  public  release; 

• distribution  unlimited. 

Prepared  for 

ECOM 


US  ARMY  ELECTRONICS  COMMAND  FORT  MONMOUTH 


NEW  JERSEY  07703 


CJC-FM  J7 00-45 


NOTICES 


Disclaimers 

The  findings  in  this  report  are  not  to  bo  construed  as  an 
official  Department  of  the  Army  position,  unless  so  desig- 
nated by  other  authorized  documents. 

The  citation  of  trade  names  and  names  of  manufacturers  in 
this  report  is  not  to  be  construed  as  official  Government 
indorsement  or  approval  of  commercial  products  or  services 
referenced  herein. 


Disposition 

Destroy  this  report  when  it  is  no  longer  needed.  Do  not 
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SECURITY  CLASSIFICATION  OF  THIS  PACE  (Wt ,an  Dat a Enlarad) 


REPORT  DOCUMENTATION  PAGE 

READ  INSTRUCTIONS 
BEFORE  COMPLETING  FORM 

1 REPORT  NUMBER 

ECOM-74-OI 04-F 

2.  GOVT  ACCESSION  NO. 

3.  RECIPIENT'S  CATALOG  NUMBER 

« TITLE  (and  Subtitle) 

EVALUATION  OF  Nd:YV04  AND 
Ho:Er:Tm:YVOj  AS  PULSE  PUMPED 

S.  TYPE  OF  REPORT  ft  PERIOD  COVERED 

Final  Report 
1 Jan  74-1  Aor  75 

Q-SWITCHED  LASERS 

6.  PERFORMING  ORG.  REPORT  NUMBER 

7.  AUTHORf*; 

Michael  Bass,  Larry  G.  DeShazer,  and 
Perry  P.  Yaney 

8.  CONTRACT  OR  GRANT  NUMBER^; 

DA  A B 07- 74- C- 01 04 

9 PERFORMING  ORGANI  ZATION  NAME  AND  ADDRESS 

Center  for  Laser  Studies 
University  of  Southern  California 
Los  Angeles,  CA  90007 

10.  PROGRAM  ELEMENT,  PROJECT.  TASK 
AREA  ft  WORK  UNIT  NUMBERS 

1S7  62703  A 1 86  06 

11.  CONTROLLING  OFFICE  NAME  AND  ADDRESS 

US  Army  Electronics  Command 

12.  REPORT  DATE 

January  1 976 

ATTN:  AMSEL-CT-L-D 

13.  NUMBER  OF  PAGES 

U MONITORING  AGENCY  NAME  ft  ADDRESS^//  dlttarani  from  Controlling  O ftlca) 

15.  SECURITY  CLASS,  (ot  thla  raporl) 

Unclas  sified 

15a.  DECLASSI  FI  CATION/ DOWN  GRADING 
SCHEDULE 

16  DISTRIBUTION  STATEMENT  (ot  thla  Report) 

Approved  for  Public  Release;  Distribution  of  this 

i document  is  Unlimited. 

17.  DISTRIBUTION  STATEMENT  (ot  tha  abatracl  anlarad  In  Block  20,  If  dlftoront  trom  Raport) 

18  supplementary  notes 

None 

19  KEY  WORDS  (Contln ua  on  ravaraa  alda  it  nacaaaary  and  Identify  by  block  numbar) 

Yttrium  orthovanadate  (YVO^);  Lasers;  Neodymium  (Nd);  Holmium  (Ho), 
Erbium  (Er),  Thulium  (Tm);  Absorption,  Emission  Spectra;  Energy 
Levels,  Stimulated  Emission  Cross  Sections;  Inclusions,  Irridium; 
Crystal  Growth 

20  ABSTRACT  (Contlnua  on  ravaraa  alda  It  nacaaaary  and  Idantlty  by  block  numbar) 

This  program  was  designed  to  develop  and  exploit  rare-earth  doped 
yttrium  orthovanadate  (YVO^)  as  a high  efficiency  laser  material.  The 
effort  included  crystal  growth,  spectroscopy  and  laser  performance  testing* 
Though  emphasis  was  placed  on  the  spectroscopic  and  laser  properties  of 
Nd^+  ions,  the  spectroscopy  of  Hc?+  ions  with  Er^  and  Tm^+  co-dopants 
was  also  studied*  Measurements  of  the  optical  absorption  and  emission 
spectra,  enerev  levels  and  stimulated  emission  cross-sections  are  renorted 

DD  , 1 473  EDITION  OF  1 NOV  65  IS  OBSOLETE 

S/N  0 102-014-  6601  | 


SECURITY  CLASSIFICATION  OF  THIS  PAGE  (Whan  Da fa  Kntarad) 


Unclassified 

-LLUMITY  CLASSIFICATION  OF  THIS  P AGEfWhen  Dili  Enttrmd) 


20.  (Continued) 

Details  in  the  spectroscopy  of  Nd^+  in  YVO4  were  measured  and  analyzed. 
The  Cary  17  Spectrophotometer  was  used  to  measure  the  absorption 
spectrum  of  Nd^+:YV04  from  0.  38  to  2.  0 Mm.  The  most  intense  absorption 
line  in  the  0.81  |jm  absorption  group,  the  group  most  appropriate  for  diode 
pumping,  was  the  line  at  0.  8080  |im  with  a = 9 cm  ^ . The  F 3 / 2 ”♦  ^Tg / 2 
spectrum  is  still  somewhat  of  a puzzle.  There  seems  to  be  more  than  one 
set  of  spectra  for  Nd^*  in  YVO^  suggestive  of  either  a second  site  for  the 
Nd^+  ions  or  else  that  there  is  significant  Nd-Nd  pair  spectra  present. 

Laser  emission  in  Ho  doped  materials  was  analyzed  theoretically. 
The  oscillator  strengths,  transition  rates  and  branching  ratios  associated 
with  known  and  potential  laser  transitions  in  Ho^+  were  calculated  using  a 
computer. 

Since  no  NdrYVO^  laser  rods  suitable  for  testing  were  delivered  by 
the  subcontractor  during  the  second  part  of  this  program  no  new  laser 
testing  was  conducted.  Several  Ho,  Er,  TmrYVO^  laser  rods  were  delivered 
but  were  not  tested  because  our  emphasis  was  concentrated  on  the  Nd 
problem.  Nevertheless,  in  the  first  six  months  of  this  program  it  was 
demonstrated  that  NdiYVO^  could  outperform  Nd:YAG  in  pulse  pumped 
Q -switched  operation.  In  addition,  reliable,  pre-pulse  free,  single  pulse 
Q switching  of  NdrYVO^  was  demonstrated  with  no  intracavity  polarizer. 


SECURITY  CLASSIFICATION  OF  THIS  PAGEfHTi.n  Dmlm  Enttfd) 


SUMMARY 


Yttrium  orthovanadate  (YVO^)  doped  with  rare  earth  ions  was  investi- 
gated for  use  as  a pulse  pumped  Q switched  laser  material.  The  spectros- 

3+  3 + 

copy  of  two  potential  laser  ions,  Nd  and  Ho  , was  studied  in  detail. 
Measurements  of  the  optical  absorption  and  emission  spectra,  energy  levels 
and  stimulated  emission  cross-sections  are  reported.  Q switched  lasing  of 
pulse  pumped  Nd:YVO^  was  demonstrated  and  found  to  be  superior  in  output 
to  that  of  Nd:YAG  in  the  same  pump  cavity.  The  pump  cavity  was  a small 
gold  plated  single  ellipse  and  was  designed  for  optimum  Nd:YAG  performance. 

In  addition,  the  strong  inherent  birefringence  of  Nd:YVO^  made  possible  pre- 
pulse free,  single  pulse  Q switching  with  no- intracavity  polarizer. 

The  crystal  growth  and  materials  evaluation  effort  of  this  program 
demonstrated  that  large  boules  (1.3  x 7 cm)  of  material  grown  along  the  crystalo- 
graphic  A axis  could  be  prepared  without  visible  color  centers.  It  was  found 
however  that  inclusions  of  irridium  from  the  crucible  were  often  present  and 
were  the  cause  of  significant  losses  in  several  crystals.  These  inclusions  are 
often  present  along  the  a-plane  which  is  a cleavage  plane  of  YVO^.  Their 
presence  weakens  the  bonding  and  cleavage  frequently  occurs  during  the  cool- 
down. This  is  a major  and  as  yet  unresolved  problem.  If  cool-down  was 
achieved  without  severe  cleavage,  the  stresses  of  sawing,  grinding  and  polish- 
ing often  caused  material  failure  during  rod  fabrication. 

It  is  the  conclusion  of  this  project  that  when  the  growth  and  fabrication 
problems  of  Nd:YVO^  are  solved,  this  material  will  be  a suitable  replacement 
for  Nd:YAG  in  laser  systems  where  input  power  is  limited. 


iii 


PREFACE 


This  is  the  final  report  on  the  ’’Evaluation  of  NdrYVO^  and  Ho,  Er, 
TmiYVO^  as  Pulse  Pumped  Q-Switched  Lasers”.  The  research  was  per- 
formed under  U.  S.  Army  Electronics  Command  Contract  No.  DAAB07-74- 
C-0104.  The  program  monitor  was  Mr.  John  W.  Strozyk,  Fort  Monmouth, 
New  Jersey.  The  research  covers  the  period  2 January  1974  to  30  March 
1975  with  the  results  of  the  work  performed  during  the  period  from 
2 January  1974  to  30  June  1 974, reported  in  the  first  semiannual  report  of 
this  program  (Report  # ECOM-74-Ol  04-1 ) and  the  work  performed  during 
the  period  from  1 July  1974  to  30  March  1975  described  herein. 

The  principal  investigators  during  this  project  were  Michael  Bass, 
Associate  Director  of  the  Center  for  Laser  Studies,  Uri  Ranon,  Senior 
Research  Scientist  at  the  Center,  and,  following  Dr.  Ranon’ s leaving  the 
Center,  Dr.  Larry  G.  DeShazer,  Director  of  the  Center,  was  substituted 
as  co-principal  investigator. 

The  following  personnel  participated  in  various  phases  of  the  study: 


Laser  Testing 
Spectroscopy,  Nd 

Spectroscopy,  Ho 
Spectroscopic  Analysis 
Color  Centers 


M.  Bass,  U.  Ranon 

L.  G.  DeShazer,  M.  Bass,  J.  K.  Guha, 

P.  P.  Yaney,  K.  M.  Leung 
E.  D.  Reed  and  U.  Ranon 

L.  G.  DeShazer,  P.  P.  Yaney,  J.  A.  Caird 
J.K.  Guha 

Mr.  L.  R.Rothrock,  R.E.  Wilder  and  Dr.  D.  Brandle  of  the  Crystal 
Products  Department,  Union  Carbide  Corporation,  San  Diego,  California, 
supplied  the  spectroscopic  samples  and  laser  rods  used  in  this  program. 
They  prepared  the  portion  of  this  report  concerning  crystal  growth  and 
laser  rod  fabrication.  Dr.  A.  B.  Chase  of  the  Aerospace  Corporation,  El 
Segundo,  California,  conducted  an  evaluation  of  material  quality  and  the 
results  of  that  work  are  also  described  in  this  report. 


iv 


During  this  report  period,  a paper  describing  some  of  the  work 

sponsored  by  this  contract  was  published.  This  paper  was  by  J.  A.  Caird 

3-l- 
and L.  G.  DeShazer,  '’Analysis  of  Laser  Emission  in  Ho  -Doped  Materials',' 

IEEE  J.  of  Quantum  Electronics  QE- 1 1 , 97  (1975).  Also,  several  meet- 
ings were  held  to  discuss  the  status  of  the  work: 


8 Oct.  1974  M.  Bass.  L.  R Rothrock,  and  D.  Brandle  visited  J.  Strozyk 
and  E.  Schiel  at  Fort  Monmouth,  NJ. 


16  Jan.  1975 
30  Jan.  1975 


14  Feb.  1975 


L.  G.  DeShazer  visited  A.B.  Chase  at  Aerospace  Corporation. 

L.  G.  DeShazer  visited  J.  Strozyk  and  E.  Schiel  at  Fort 
Monmouth,  NJ. 

L.  G.  DeShazer  visited  L.  R Rothrock  at  UCC. 


v 


TABLE  OF  CONTENTS 


REPORT  DOCUMENTATION  PAGE  DD  FORM  1473 

SUMMARY 

PREFACE 

TABLE  OF  CONTENTS 

LIST  OF  ILLUSTRATIONS 

LIST  OF  TABLES 

I.  INTRODUCTION 

II.  MATERIALS  GROWTH  AND  PREPARATION  

A.  Growth  of  YVO^  Crystals  at  Union  Carbide  Corp. 

1.  Background 

2.  Melt  Effects 

3.  Growth 

4.  Fabrication 

5.  Analysis 


III. 


B.  Evaluation  of  Scattering  Centers  in  Czochralski  Grown 

YVO, 

4 


C.  Flux  Growth  of  YVO^  at  Aerospace  Corporation 
SPECTROSCOPY  OF  RARE  EARTH 

A.  Introduction 

B.  Experiment 

C.  Spectra 


1. 

2. 

3. 


4I  -2P 

9/2  1/2 

4i  4f 

9/2  3/2 

4 4 

F I 

3/2  n/2 


D.  Analysis 


1.  Site  Symmetry 

2.  Electric  Dipole  Transitions  Between  Crystal-Field 

Levels 


Page 

i 

iii 

iv 
vi 

viii 

xii 

1 

4 

4 

4 

4 

6 

12 

15 

27 

32 

37 

37 

38 
41 
46 

46 

48 

49 
49 

51 


vi 


Page 

3.  The  P State  in  D_  Symmetry 58 

1 / Z Zd 

E.  Energy  Level  Scheme 61 

F.  Summary 68 

IV.  SURVEY  OF  Nd: YVO  . ABSORPTION 69 

« 4 

V.  LASER  PERFORMANCE  TESTING 90 

VI.  CONCLUSIONS  AND  RECOMMENDATIONS  FOR  FUTURE 

EFFORTS 98 

REFERENCES  99 

3 + 

APPENDIX  A:  Analysis  of  Laser  Emission  in  Ho  -Doped 

Materials 


APPENDIX  B:  Continuous -wave  Operation  of  Nd:YVO  at  1.06  and 

1.  34  M 


vii 


LIST  OF  ILLUSTRATIONS 


r 


1. 


2. 

3. 


4. 


5. 


6. 


7. 


8. 

9. 

10. 

11. 

12. 

13. 

14. 

15. 

16. 

17. 


18. 


19. 

20. 

21. 

22. 


Phase  diagram-system  After  E.  M.  Levin, 

J.  Am.  Cer.  Soc.  50:7,  381  (1967) 

Remnants  of  YVO,  Melts 

4 

Laue  patterns  for  (100)  and  (110)  YVO^ 

Cross-section  habits  of  C-axis  and  A -axis  YVO. 

4 

Some  boules  grown  during  contract 

Included  particle  (A)  and  general  crystal  matrix  in 

( Y.  ,„Er  Tm  0Hoft  n,)VO, 

' 0.17  0.75  0.  07  0.  01  4 

E.  D.  X.  A . of  area  "A"  in  Figure  6 

E.  D.  X.  A.  of  area  "B"  in  Figure  6 

Included  particles  along  a cleavage  step  in 

(Y . ,„Er  Tm  H0  )VO, 

' 0.17  0.  75  0.07  °o.  01  4 

E.  D.  X.A.  of  area  "C"  in  Figure  9 

E.  D.  X.  A . of  area  " D"  in  Figure  9 

A large  inclusion  in  (YQ.  , ?Er0_  ^Trry  07Ho0.  01>VC>4 

E.  D.  X.  A . of  area  "E"  in  Figure  12 

E.  D.  X.  A . of  pure  powder, 

E.  D.  X.  A.  of  pure  E^O^  powder 

E.  D.  X.  A.  of  pure  YVO^  powder  

Scattering  centers  in  Nd:YVO^ 

Scattering  centers  iri  Nd:YVO^.  The  polarization  of  the  illumi- 
nating light  was  parallel  to  one  of  the  polarization  directions  of 
(100)  plane  in  (a)  and  to  the  other  in  plane  (b) 

Triangular  scattering  center  in  NdrYVO^.  Possibly  Ir  or  Pt  .. 

Normal  plate  habit  of  YVO^.  Also  has  small  ~normal  zircon 
habit 

Flux  grown  YVO^  Crystals 

Experimental  arrangements  for  absorption  spectroscopy 


Page 

5 

7 

9 

10 

11 

16 

17 

18 

19 

20 
21 
22 

23 

24 

25 

26 
28 

29 

31 

34 

35 
40 


viii 


LIST  OF  ILLUSTRATIONS  (continued) 


Page 


23.  Polarized  absorption  spectra  of  the  ^9/2^  ^1/2  trans*ltlons 

of  Nd-.YVO^  at  ~300°K.  The  letters  a,  b#  c,  and  e,  denote  the 
crystal  field  levels  of  the  ^9/2  state#  The  c-axis  was  trans- 
verse to  the  observation  axis 42 

24.  Polarized  absorption  spectra  of  the  ^9/2  “*^3/2  trans*ltlons 
NdrYVO^  at  two  temperatures.  The  peak  of  the  Flat-topped  rr-line 
at~  300°Kwas  determined  to  be  at  18.5  cm“',  Crystal  oriented 

as  In  Figure  23 43 

25.  The  dye-laser -excited,  polarized  fluorescence  spectra  of  the 
^^3/2  "*^9/2  transitions  of  Nd:YVO^  at  two  temperatures.  The 
gain  factors  xl , etc.  f apply  only  within  the  given  temperature. 

The  letters  a1  and  b1  denote  the  crystal-field  levels  of  the  ^Fg/2 
state  while  the  unprimed  letters  identify  the  levels  belonging  to  the 
^Ig/2  state.  The  inset  (i)  shows  the  self-absorption  which  occurs 
when  the  dye  laser  beam  is  moved  back  from  the  observed  surface. 
Crystal  oriented  as  in  Figure  23 44 

26.  The  dye-laser-excited,  polarized  fluorescence  spectra  of  the 
4^3/2  "*^*11/2  *rans iti°ns  Nd: YVO^  at  two  temperatures.  The 
gain  factors  xl,  etc.,  apply  only  within  the  given  temperature. 

The  letters  a1  and  b1  denote  the  crystal-field  levels  of  the  ^Fg/2 
state  while  the  unprimed  letters  identify  the  levels  belonging  to  the 
^11/2  state*  Crystal  oriented  as  in  Figure  23 45 

27.  The  tetragonal  unit  cell  Qf  yttrium  vanadate  after  Wyckoff 

(Ref.  15).  The  cell  contains  four  YVO4  molecules.  Eight  face- 
oxygen  ions  associated  with  four  vanadium-oxygen  tetrahedra  that 
are  located  at  the  four  off-center  face  positions  of  vanadium  have 
been  omitted  from  the  cell  to  enhance  clarity 50 

28.  Energy  levels  ( + 1 cm~^)  of  selected  states  of  NdrYVO^  at  room 
temperature  showing  transitions  resolved  at  ~85°K.  The  approxi- 


mate positions  of  the  levels  at  ~85°K  are  shown  as  short  dashed 
lines,  (a)  This  is  the  ~85°K  value.  See  Table  6 63 

29.  2.  5 pm  band  of  Nd:YVO^  absorption  spectra  at  room  temperature. 
Taken  with  Beckman  DK-2A  spectrophotometer.  1%  Nd.  4 mm 

thick 74 

30.  1.  6 pm  band  of  NdrYVO^  absorption  spectra  at  room  temperature. 

Partially  polarized  light  propagating  along  the  a-axis.  Mostly  n 
spectrum.  1%  Nd.  4 mm  thick 75 


ix 


LIST  OF  ILLUSTRATIONS  (continued)  Page 

31.  1. 6 pm  band  of  Nd:YVO^  absorption  spectra  at  room  tempera- 
ture. Lower  curve  is  a spectrum.  Propagation  along  c-axis. 

1%  Nd.  5 mm  thick.  Upper  curves  demonstrate  the  fact  that 
the  Cary  17  spectrophotometer  is  partially  linearly  polarized. 
Propagation  along  a-axis.  1%  Nd.  4 mm  thick 76 

32.  0.  89  pm  band  of  NdrYVO^  absorption  spectra  at  room  tempera- 
ture. a spectrum.  1%  Nd.  4 mm  thick 77 

33.  0.  89  pm  band  of  NdrYVO^  absorption  spectra  at  room  tempera- 
ture. a spectrum.  3%  Nd.  8.  5 mm  thick.  •••••••••••••••••••  78 

34.  0.  89  pm  band  of  NdrYVO^  absorption  spectra  at  room  tempera- 
ture. rr  spectrum.  1%  Nd.  4 mm  thick.  ••••••• ••••••••  79 

35.  0.  89  pm  band  of  NdiYVO^  absorption  spectra  at  room  tempera- 
ture. TT  spectrum.  3%  Nd.  8.  5 mm  thick 80 

36.  0.  75  and  0.  81  pm  bands  of  NdrYVO^  absorption  spectra  at  room 

temperature,  o spectrum.  1 % Nd.  4 mm  thick  .............  . 81 

37.  0.  75  and  0.  81  pm  bands  of  Nd:YVO^  absorption  spectra  at  room 

temperature,  tt  spectrum.  1%  Nd.  4 mm  thick 82 

38.  0.  59  pm  (yellow)  band  of  NdiYVC^  absorption  spectra  at  room 

temperature,  a spectrum.  1%  Nd.  4 mm  thick  83 

39.  0.  59  pm  (yellow)  band  of  NdrYVO^  absorption  spectra  at  room 

temperature,  n spectrum.  1%  Nd.  4 mm  thick 84 

40.  Yellow  band  of  NdrYVO^  absorption  spectra  at  room  temperature. 

rr  spectrum  on  scale.  1%  Nd.  4 mm  thick 85 

41.  0.  53  pm  band  of  Nd:YVO^  absorption  spectra  at  room  tempera- 
ture. a spectrum.  1%  Nd.  4 mm  thick 86 

42.  0.  53  pm  band  of  Nd:YVO^  absorption  spectra  at  room  tempera- 
ture. rr  spectrum.  1%  Nd.  4 mm  thick 87 

43.  X<  0.  5 pm  bands  of  Nd:  YVO^  absorption  spectra  at  room  tem- 
perature. a spectrum.  1%  Nd.  4 mm  thick 88 

44.  \<  0.  5 pm  bands  of  Nd:  YVO^  absorption  spectra  at  room  tem- 
perature. tt  spectrum.  1%  Nd.  4 mm  thick 89 

45.  Nd:YAG  laser  output  vs  input  energy  data  with  and  without  the 
ignitron  in  the  discharge  circuit.  Current  pulse  FWHM  is 

125  ps  with  a krypton-filled  lamp,  1200  Torr 91 


x 


LIST  OF  ILLUSTRATIONS  (continued)  Page 

46.  Output  versus  input  energies  for  the  3 x 30  mm  Nd:YAG 

(ECOM-YAG)  using  the  Xe  flashlamp  (450  T)  and  the  125  jjsec 
(FWHM)  pump  pulse  duration.  Output  R = 45% 92 

47.  Q-switched  laser  output  vs  input  energy  from  Nd:YVO^  (rod  3L) 
using  a Pockels  cell  Q-switch  and  no  intracavity  polarizer.  The 
output  reflector  was  3%  R at  1.06  jjm.  x Pockels  cell  Q-switched. 

0 Long  pulse  lasing  with  Pockels  cell  in  cavity.  C3  Long  pulse 
lasing,  empty  cavity 93 

48.  Electrooptically  Q-switched  configurations,  (a)  A Pockels -cell- 
Glan-polarizer  combination  in  a Nd:YAG  laser  cavity,  (b)  A 
Pockels  cell  only  in  a cavity  which  has  a strong  polarization- 
dependent  gain,  (c)  A Pockels  cell  in  a cavity  where  the  laser 

rod  is  slightly  wedged  and  strongly  birefr ingent.  • 94 


xi 


LIST  OF  TABLES 


1. 

2. 

3. 


4. 


Comparison  of  Neodymium  Laser  Hosts 

Starting  Materials  Available  for  Crystal  Growth 

List  of  Boules  Grown 

Transitions  Permitted  by  the  3-j  Symbol  in  Eq.  (3)  for  the 

4 4 3 + 

L . F„  Transitions  of  Nd  in  2D„  , Symmetry  . . . . 

9/2  3/2  2d  7 7 


5.  Electric  Dipole  Selection  Rules  in  D_  Symmetry 

Zd 

o 4- 

6.  Observed  Transitions  of  ~1  Atomic  % Nd  in  YVO  . • . . . . 

4 4 4 

7.  Parameters  for  F^^  "*  I \\/2  ^rans ’ltlons  ’in  Nd:YVO^  at 

Room  Temperature 

8.  Absorption  Lines  of  Nd:YVO^  at  Room  Temperature 

Nominally  1%  Nd 


Page 

3 

8 

13 

58 

60 

64 

65 
69 


xii 


I.  INTRODUCTION 


The  object  of  this  program  is  to  investigate  rare  earth  doped  yttrium 
orthovanadate  (YVO^)  for  use  as  a low  threshold,  pulse  pumped,  Q-switched 

laser  material.  Detailed  studies  of  Nd:YVO„  laser  material  were  made. 

4 

This  included  spectroscopic  measurements  of  interest  for  predicting  and 
evaluating  laser  performance  and  demonstration  of  long  pulse  and  pulse 
pumped,  Q-switched  operation.  Because  of  the  concentration  on  Nd:YVO^ 
only  spectroscopic  measurements  were  made  for  the  Ho,  Er,  Tm:YVO^  laser 
material. 

YVO^  was  proposed  as  a laser  host  crystal  many  years  ago  [ 1,  Z] 
but  was  dropped  because  of  early  crystal  growth  difficulties.  Recent  advances 
in  the  growth  of  this  crystal  [3]  however  show  that  these  difficulties  are  not 
insurmountable.  As  part  of  this  program  large  A axis  boules  (1.  3x7  cm) 
and  3 x 30  mm  Nd:YVO^  laser  rods  have  been  prepared.  These  have  been 
free  of  color  centers  and  have  had  excellent  optical  quality.  A laser  rod 
fabrication  problem  was  encountered  causing  the  loss  of  several  potential 
laser  rods.  However,  with  improved  material  (i.  e.  , material  free  of 
included  irridium)  the  fabrication  problem  should  be  correctable. 

Table  1 summarizes  the  pertinent  data  for  Nd  in  YVO^.  Included  in 
Table  1 are  data  for  Nd  in  YAG,  GGG  and  YAIO^.  The  peak  cross  section 
for  the  laser  transition  at  1 . 06  (am  of  Nd  in  YVO^  is  30  x 10“  cm  as  com- 
pared to  6.  5 x 10“19  cm^  in  YAG.  The  fluorescent  lifetime  for  the  upper 
4 

laser  level  ( in  YVO^  is  accordingly  smaller  than  in  YAG,  92  (a sec  as 

compared  to  240  pisec.  In  a small  elliptical  laser  cavity,  the  threshold  for 
long  pulse  operation  of  Nd:YVO^  is  less  than  half  that  for  Nd:YAG.  The  table 
also  includes  the  crystal  growth  rate  (~  3x  higher  for  Nd:YVO^  than  Nd:YAG) 
and  segregation  coefficient  (~2X  larger  in  Nd:YVO^  than  in  Nd:YAG). 

Specifically,  it  is  to  be  noted  that  this  report  summarizes  a 15  month 
study  of  the  laser  properties  and  spectroscopy  of  Nd:YVO^  and  of  the  spectros- 
copy of  Ho,  Er,  TmtYVO^.  The  materials  preparation  and  quality  evaluation 


1 


efforts  are  described  in  Section  II.  Spectroscopic  measurements  and  their 
interpretation  are  discussed  in  Section  III.  Section  IV  presents  a survey 
of  the  NdrYVO^  absorptions.  The  laser  testing,  while  described  in  detail 
in  the  semiannual  report,  is  discussed  and  Pockels  cell  Q switching  of 
NdrYVO^  with  no  intracavity  polarizer  is  analyzed  in  Section  V.  In  Section 
VI,  the  major  conclusions  of  this  program  are  summarized  and  recommenda- 
tions for  further  work  are  given.  In  Appendix  A we  present  a discussion  of 

34- 

laser  emission  in  Ho  doped  materials.  In  addition,  for  completeness  we 
have  included  in  Appendix  B a description  of  work  done  at  The  Aerospace 
Corporation  concerning  argon  laser  pumped  CW  lasing  of  Nd:YVO^  at 
1 . 06  and  1.  34  [Jm. 


2 


Table  1.  Comparison  of  Neodymium  Laser  Hosts 


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Comments  High  gain,  low  Standard  ^ matches  glass.  Low  gain,  C-axis 

threshold  optical  quality.  High  gain,  B-axis 

size 


II.  MATERIALS  GROWTH  AND  PREPARATION 


A.  Growth  of  YVO^  Crystals  at  Union  Carbide  Corp. 

1.  Background 

The  growth  of  YVO^  single  crystals  began  at  Union  Carbide  Crystals 
Products  in  1965  and  small  pure  and  doped  crystals  were  grown  by  the 
Czochralski  process  [4,  5].  The  crystals  were  grown  on  a flame-heated 
growth  station  from  an  iridium  crucible.  These  crystals  were  supplied  to 
various  laboratories  including  RCA  and  Bell  Telephone  Laboratory.  More 
recent  work  was  funded  by  the  U.  S.  Army  Electronics  Command  at  Ft. 
Monmouth  under  Contract  DA  A B0772-C-0022.  [3]  This  work  included  Bridgman 
and  Czochralski  growth  and  was  aimed  at  undoped  YVO^  for  polarizing  prisms. 
The  technique  settled  on  was  RF  induction  heated  Czochralski  and  boules  of 
1/2M  dia.  x 4"  long  were  eventually  produced.  High  optical  quality  polarizing 
prisms  were  cut  from  the  material.  Following  this  work,  some  in-house 
effort  was  put  forth  to  grow  some  YVO^  crystals  doped  with  Nd  and  with  Er, 

Tm,  and  H^.  These  crystals  were,  in  general,  small  and  the  work  was  con- 
cerned with  growth  habits,  inclusions  and  melt  composition. 

The  work  of  this  report  was  begun  under  sub-contract  to  the  University 
of  Southern  California  and  was  directed  toward  supplying  3 x 30  mm  laser  rods 
and  spectrographic  samples  of  rare  earth  doped  YVO^,  ErVO^  and  TmVO^. 

2.  Melt  Effects 

The  phase  diagram  for  Y O -V  O (Figure  1)  shows  that  YVO  melts 

2 3 2 5 4 

congruently  at  1810°C.  It  appears,  however,  that  the  melt  is  not  stable  under 
normal  furnace  atmosphere  conditions  and  that  oxygen  is  lost  from  the  melt. 

At  the  growth  temperature,  the  melt  is  very  turbulent  and  complex  dark  con- 
vection lines  are  observed.  As  the  temperature  is  lowered,  the  melt  forms 
a crust  of  solid  material  on  the  surface.  This  crust  can  be  removed  by  using 


4 


Temperature  (°C) 


1 


Figure  1.  Phase  Diagram-System  Y203_V2°s*  After  E.  M.  Levin, 
J.  Am.  Cer.  Soc.  50  [7]  381  (1967). 


5 


argon  or  nitrogen  flow  in  the  growth  system.  Liquid  V O slightly  above  the 

Z 5 

melting  point  dissociates  according  to 


v2°5 


V2>5-x  + 


- o 

2 2 


Where  more  and  more  suboxides  appear  with  increasing  temperature.  It  is 

believed  that  YVO,  behaves  in  a similar  manner.  That  is 

4 

YVO  . -►  YVO,  + ~ O . 

4 4-x  2 2 

44 

It  has  been  shown  that  the  concentration  of  V can  be  controlled  for  certain 
practical  oxygen  partial  pressures  and  that  Czochralski  growth  can  be  effected 
from  the  solution.  While  control  of  crystal  diameter  and  atmosphere  is  criti- 
cal and  difficult,  high  quality  boules  have  on  occasion  been  produced. 

Invariably,  melts  which  have  been  solidified  after  growth  are  dark 
indicating  a reduced  state  and  appear  to  have  many  phases  present.  Figure 
2 shows  remainders  of  melts  from  various  growths. 


3.  Growth 

During  this  research  a total  of  50  crystal-growth  runs  were  made. 
Growth  was  performed  in  a standard  Czochralski  growth  station  using  a 
2M  x 2"  iridium  crucible.  Pull  rates  were  as  high  as  3 mm/hr  with  1.  5mm/hr 
settled  on  as  it  appears  that  inclusions  are  reduced.  Various  starting  mate- 
rials were  used  and  availability  is  sometimes  a problem.  A list  of  available 
materials  is  given  in  Table  2. 

Initial  growth  runs  on  a new  material  were  made  with  lower  purity 
materials  while  runs  for  yield  were  made  with  high  purity  ones.  No  effect  on 
crystal  growth  was  seen  as  a result  of  purity.  For  production  of  samples  and 
laser  rods  the  preferred  material  is  General  Electric's  YVO^  powder  of 
99.  99%  purity. 


6 


2.  V„  Mi  Y\/<J,| 

3- Yi'-<I7 


40C  Yl fOfl  XT t*n  «i 


B-Yi/-43 


T 


3%  wJ:V^04» 

On»uh  0«o#D  *>\*  LT  Prta*' 

Jtat»  lr  X. 


Figure  2.  Remnants  of  YVO^  Melts. 


7 


Table  2.  Starting  Materials  Available  for  Crystal  Growth 


Material 

Purity 

Suppliers 

Price 

YVO  . 
4 

99.  99% 

General  Electrics 

$101. 60/lb 

Tm2°3 

99.  99% 

Research  Chemicals 

4.  00/gm 

Tm  ° 

99.9  % 

Research  Chemicals 

2.  75 /gm 

99.  999% 

Research  Chemicals 

200.00/lb 

Er2°3 

99.9  % 

Research  Chemicals 

45.  00/lb 

H°2°3 

99.9  % 

Research  Chemicals 

0.  35/gm 

V2°3 

99.  99  % 

Research  Chemicals 

14.  50/lb 

Growth  was  begun  with  stoichiometric  melts  at  60  standard  cubic  feet 
per  hour,  scf/h,  n^  flow  with  1%  atmosphere.  A rotation  rate  of  28  rpm 
and  a pull  rate  of  1.  5 mm/hr  were  established.  A seed  of  a-axis  orientation 
was  used  for  most  growths.  Several  growths  were  made  off  axis  due  to  an 
error  in  seed  orientation.  The  Laue  photographs  used  for  orienting  the  seeds 
for  a-axis  were  actually  (110).  Laue  patterns  for  each  one  are  shown  in 
Figure  3. 

The  crystals  exhibit  a marked  habit  when  grown  along  the  a-axis.  As 
shown  in  Figure  4,  the  boule  cross-section  is  flattened  with  faceting  on  (100) 
and  the  long  edge  parallel  to  (001).  The  aspect  ratio  of  the  flattening  can  be 
affected  by  pull  rate.  C-axis  material,  on  the  other  hand,  grows  with  a 
nearly  square  cross-section. 

Diameter  control  is  very  sensitive  and  difficult  and  frequent  cross- 
section  steps  were  encountered.  Figure  5 shows  several  of  the  shapes  ob- 
served. Some  improvement  in  this  condition  was  made  by  tuning  control 
equipment  as  closely  as  possible  during  the  contact.  As  these  changes  occur, 
the  growth  rate  at  the  interface  changes  and  inclusions  of  bubbles,  second 
phase  material  and  occasionally  iridium  are  observed  to  form  on  the  inter- 
face. 


8 


9 


Figure  3.  Laue  patterns  for  (100)  and  (110)  YVO 


<0I0> 


(b)  a -ax is 


Figure  4. 


Cross-section  Habits 


of  C-axis  and 


A-axis  YVO 


4* 


10 


1 


11 


Since  the  interface  is  nearly  flat  in  YVO^,  this  means  that  inclu- 
sions occur  nearly  along  the  a-plane.  The  a-plane  is  a strong  cleavage 
plane,  but  has  sufficient  strength  to  withstand  normal  fabrication  stresses* 
However,  when  inclusions  are  present  on  the  interface  the  bonding  is  weak- 
ened remarkably  and  cleavage  frequently  occurs  in  cool-down  or  in  fabri- 
cation. This  is  a major  problem  which  must  be  solved. 

Grown  boules  are  in  a reduced  state  and  are  dark  in  color.  Sub- 
sequent annealing  in  oxygen  at  1400°C  for  24  hours  serves  to  return  them 
to  transparency.  No  color  changes  were  observed  in  the  boules  in  normal 
storage  and  handling. 

Crystals  grown  were: 

Material  Growth  Runs  Yield  of  4cm  Boules 


Nd:  Y VO 

4 

' ’ABC":  YVO 

4 

Er  VO 

4 

Tm:  Y VO 

4 


26 

21 

2 

1 


5 

13 

1 

0 


A list  of  actual  compositions  appears  in  Table  3. 


4.  Fabrication 

YVO^  has  a hardness  of  480  KHN  which  is  the  range  of  many  glasses 
and  as  such  polishes,  saws,  and  grinds  well.  The  major  problem  is  that 
of  cleavage  along  the  a-plane.  It  is  felt  that  the  problem  may  be  due  largely 
to  the  presence  of  growth  imperfections  on  the  interface  (a-plane)  as  already 
discussed.  Credence  is  given  this  hypothesis  by  the  fact  that  laser  rods  do 
not  cleave  into  an  infinite  number  of  platelets.  When  a rod  does  cleave,  it 
usually  withstands  all  subsequent  grinding  and  processes  without  further 
cleaving. 

Because  of  high  losses  in  grinding  laser  rod  cylinders,  core  drilling 
was  investigated.  Although  core  drilling  provides  a more  gentle  technique, 
losses  continued  at  the  same  rate.  The  problems  in  fabrication  are 


12 


Table  3.  List  of  Boules  Grown 


Table  3.  List  of  Boules  Grown  (continued) 


illustrated  by  the  fact  that  crystals  were  submitted  for  thirteen  3x30  mm 
laser  rods  and  ten  3 x 20-30  mm  while  no  rods  were  fabricated  without  break- 
age and  at  least  some  loss  of  lengths. 

5.  Analysis 

A cleaved  sample  of  (Y  -Er  ^cTrnn  )VO A was  sent  to 

Seal  Laboratories  for  analysis  with  particular  attention  to  inclusions.  Analy- 
sis was  done  using  scanning  electron  microprobe  and  electron  microprobe. 
Energy  dispersive  x-ray  analysis  (DXA)  was  used  for  the  electron  micro- 
probe. This  technique  is  useful  from  the  surface  to  a depth  of  one  micron. 

A general  area  of  the  surface  of  the  crystal.  Figure  6,  shows  an 
included  particle  (A),  the  general  crystal  matrix  (B),  and  several  loose  con- 
taminant particles.  EDXA  was  performed  on  the  particle  at  A,  Figure  7 and 
indicated  the  presence  of  major  amounts  of  vanadium  and  erbium,  a minor 
amount  of  yttrium,  and  traces  of  thulium  and  silicon.  The  EDXA  of  the  matrix 
(B)  indicated  the  presence  of  the  same  composition,  except  that  no  silicon 
was  present,  Figure  8. 

Included  particles  along  a cleavage  step  is  shown  in  Figure  9.  EDXA 
of  the  particle  at  "C"  showed  major  amounts  of  erbium,  vanadium  and  cal- 
cium, minor  amounts  of  silicon,  yttrium  and  potassium  and  trace  amounts  of 
sulfur,  chlorine,  and  thulium  (Figure  10),  The  EDXA  of  the  adjacent  matrix 
(Figure  11)  showed  the  same  composition  as  the  previous  matrix. 

A large  inclusion.  Figure  12,  was  also  EDXA,  the  inclusion  contained 
major  amounts  of  vanadium,  erbium,  silicon,  chlorine,  sulfur,  potassium 
and  calcium,  a minor  amount  of  yttrium,  and  a trace  of  thulium  (Figure  13). 

Samples  of  the  pure  powders  used  to  make  the  crystals  were  also 
analyzed  using  EDXA  (Figures  14-16).  Using  the  peak  heights  and  calculating 
the  number  of  X-ray  peak  counts  per  atom  percent,  the  atom  ratios  of  the 
vanadate  crystal  were  calculated:  V:Er  (plus  Ho  and  Tm):Y  were  2.  6:2.  7:0.  13. 


Figure  6. 


Included  Particle  (A)  and  General  Crystal 
Matrix  in  <YQ.  ,?Er0_  0?Ho0.  0]  >V04. 


16 


17 


X-ray  Photon  Energy  (keV) 

Figure  7.  E.D.  X.  A.  of  area  nA"  in  Figure  6. 


> 

<D 

JX. 


>N 

CP 

k_ 

Q) 

C 

LU 


c 

o 

o 

JZ 

CL 


>N 

0 

k_ 

1 

X 


18 


Figure  8.  E.  D.  X*A.  of  area  "BH  in  Figure  6 


Figure  9. 


Included  Particles  Along  a Cleavage 
S'ep  in  (Y0_)7Er0_75Tm0_  07H«0^,)VO4 


19 


20 


Figure  10.  E.D.  X.A.  of  area  "C"  in  Figure 


(sjunoo  000*8  :9|dos  nnj) 
s^unoo  uojoiy  <dj-x  |ojox 


21 


a; 

Jh 

3 

w 

E 


-ray  Photon  Energy  (keV) 


SEAL 


Figure  12. 


A 

(Y 


Large  Inclusion  in 

- , Er^  nrTm„ 

0.  17  0.  75  0.  07 


HO0.01)VO4- 


22 


23 


X-ray  Photon  Energy  (keV) 

Figure  13.  E.D.  X.  A.  of  area  "E"  in  Figure  1Z, 


24 


Figure  14.  E.  D.  X.  A.  of  pure  VO  powder. 


- 


. o 


sjunoo  uo|oiy  ^dj-x  |D40j_ 


25 


X-ray  Photon  Energy  (ke V) 

Figure  15.  E.  D.  X.A.  of  pure  Er  O powder. 


(siunoo  DO|/ooO'S9  :a|DDS||nj)  o 
s;unoQ  uojoiy  Adj-x  |djoj_ 


26 


-ray  Photon  Energy  (keV) 

Figure  16.  E.  D.  X.  A.  of  pure  YVO  powder. 


B.  Evaluation  of  Scattering  Centers  in  Czochralski  Grown  YVO 

4 

Two  single  crystals  of  YVO^  grown  by  Union  Carbide  Corp.  were 
examined  at  Aerospace  Corp.  with  a polarizing  microscope  to  see  if  the  cen- 
ters responsible  for  laser  scattiring  could  be  identified.  The  crystals  were 
both  Nd^O^  doped  and  were  delibered  from  Union  Carbide  to  USC  at  different 
times. 

One  of  the  crystals  was  in  the  form  of  an  MaM  axis  laser  rod.  Prelimi- 
nary examination  showed  several  zones  of  intense  light  scattering  alont  the 
length  of  the  crystal.  Since  this  crystal  was  a reject  due  to  the  scattering,  it 
was  decided  to  examine  it  more  closely  bo  optical  microscope  techniques. 

Two  polished  sections  ere  prepared,  one  parallel  and  the  other  perpendicular 
to  the  rod  axis.  Each  section  was  chosen  such  that  it  contained  a volume  of 
the  original  rod  that  scattered  light.  Optical  examination  showed  a high  volume 
of  scattering  centers  such  as  those  shown  in  Figure  17. 

High  magnification  of  these  scattering  centers  showed  them  to  have  two 
characteristics  as  shown  in  Figure  18a,  b.  The  photomicrographs  are  taken 
of  the  "a"  axis  slice  of  the  rod.  The  difference  of  Figure  18a,  b is  that  each 
was  taken  with  the  polarizer  parallel  to  each  of  the  polarization  directions  of 
the  (100)  plane.  For  one  of  the  polarization  directions  the  scattering  centers 
appear  to  be  round  black  dots  approximately  4 or  5 microns  in  diameter.  For 
the  other  polarization  the  scattering  center  appears  to  be  more  comples.  The 
rod  shaped  sharp  index  change  appears  around  the  dot  and  is  aligned  in  ran- 
dom directions  in  the  crystal.  Normally  one  would  assign  apparent  index 
changes  to  diffraction  effects  around  the  scattering  center.  In  this  case  there 
appears  to  be  a sharp-irregular  index  change  associated  with  most  but  not  all 
of  the  scattering  centers.  Due  to  the  small  size  of  the  scattering  centers,  one 
cannot  clearly  state  whether  the  black  dot  represents  a solid  phase  or  a void 
in  the  crystal.  However,  at  this  time  a best  guess  would  be  that  it  is  a void 
and  the  endex  change  represents  a rod  shaped  unknown  phase  associated  with 
the  void.  In-as-much  as  their  distribution  was  not  uniform  along  the  length  of 
the  laser  rod,  one  can  state  that  the  crystal  growth  was  not  sufficiently  controlled. 


27 


Spill 

■■ 


%• 


♦ 


***  4 

•« 


Figure  17. 


Scattering  centers  in  Nd:YVO  . 

4 


28 


Figure  18.  Scattering  centers  in  Nd:YVO^. 

The  polarization  of  the  illuminating  light  was 
parallel  to  one  of  the  polarization  directions  of 
(100)  plane  in  (a)  and  to  the  other  in  plane  (b). 


29 


The  other  crystal  was  in  the  form  of  a quarter  inch  polished  cube. 
Microscopic  examination  revealed  that  the  extinctions  in  the  naM  axis 
direction  were  nearly  complete  and  fairly  sharp  while  that  in  the  ncM  axis 
direction  was  incomplete  and  poor.  The  extinction  in  the  McM  direction 
was  light  grey  for  all  orientations  indicating  a McM  axis  wander  or  a constant 
random  strain  that  varied  throughout  the  length  of  the  crystal.  Two  types  of 
randomly  distributed  scattering  centers  were  observed  in  this  crystal.  One 
is  of  the  type  shown  in  Figure  19.  The  black  triangular  solid  is  very 
thin,  absorbs  all  light,  and  reflects  metalic  with  incident  light.  Without 
either  chemical  or  crystallographic  analysis  one  can  only  suggest  its  nature. 
Generally,  it  fits  the  description  of  a metal  such  as  Ir  or  Pt . This  type  of 
included  solid  has  been  found  in  a number  of  high  melting  temperature  oxides 
grown  from  either  Ir  or  Pt  crucibles.  Presumably  the  metal  is  soluable 
in  the  melt,  precipitates  in  the  melt  and  is  trapped  by  the  growing  crystal. 

The  size  varies  from  5 to  ^15  microns.  The  other  scattering  center  observed 
was  an  extremely  small  black  dot  such  as  those  shown  in  the  photomicrograph 
The  size  is  1 to  2 microns  and  as  such  is  at  the  resolving  limit  of  the  micro- 
scope. Both  of  these  defects  are  randomly  distributed  over  the  crystal  in 
zones  again  indicating  a lack  of  control  during  the  crystal  growth  process. 


30 


Figure  19. 


Triangular  scattering  center  in 
Nd:YVC>4.  Possibly  Ir  or  Pt. 


31 


C.  Flux  Growth  of  YVO^  at  Aerospace  Corporation 

Single  crystals  of  YVO^  and  (Er,Y)VO^  were  grown  by  standard  flux 
growth  techniques  in  order  to  compare  the  defect  properties  of  the  crystals 
grown  at  low  temperatures  with  those  grown  by  Union  Carbide  by  melt 
techniques.  A small  number  of  crystal  growth  runs  were  required  in  order 
to  produce  the  necessary  crystals.  The  crystals  were  checked  with  a 
polarizing  microscope  to  determine  the  structure.  They  are  optically  uniaxial 
with  the  same  optical  properties  as  tetragonal  YVO^. 

The  crystals  of  YVO^  and  Rare  Earth  doped  YVO^  were  grown  from  a 
V^Oj-  flux  by  standard  flux  growth  techniques.  They  were  grown  from  a 
solution  supersaturated  by  both  slow  cooling  and  flux  evaporation.  The 
chemicals  used  for  the  growth  of  YVO^  were  American  Potash  code  116 
and  J.  T.  Baker  Co.  Reagent  Grade  V^O^. 

Standard  form  50  mil  platinum  crucibles  were  filled  with  the  appropriate 
powder  mixtures,  their  lids  tightly  crimped,  and  placed  in  a Super -Kanthal 
heated  muffler  furnace.  They  were  heated  to  1250°  C soaked  4-8  hours,  pro- 
gramed cooled  at  a rate  of  approximately  4°C/hr,  then  removed  from  the 
furnace  and  allowed  to  cool  to  room  temperature.  The  crystals  were  removed 
from  the  crucibles  by  soaking  in  hot  dilute  HNO^  or  HC1.  The  melt  com- 
positions used  varied  from  4 to  10  mole  % with  remainder  being  V^O^.. 

The  crystals  nucleated  throughout  the  melt  and  varied  in  size  from  0.  5 - 3 mm. 
They  were  of  two  diverse  habits  (plate -like  and  equidimensional)  with  the 
largest  being  of  the  plate  type.  The  dimensions  of  the  plate-like  crystals  were 
approximately  3 by  4 mm  with  a thickness  that  varied  from  0.  1 to  0.  5 mm. 

The  equidimensional  crystals  were  generally  =*0.  5 mm  with  a few  as  large 
as  2 mm.  No  significant  change  in  habit  was  detected  with  up  to  10%  of  the 
Y2O3  being  replaced  by  rare  earth  ions. 

The  crystals  varied  from  colorless  to  pale  yellow  from  run  to  run  with  no 
indication  of  any  direct  cause.  It  is  felt  that  this  was  due  to  impurities  in 
the  melt  as  little  care  was  taken  to  insure  high  purity  growth  materials  or  to 
eliminate  introduction  of  impurities  into  the  melt.  Some  of  the  larger  plate - 
like  crystals  had  ordered  trapped  flux  inclusions  parallel  to  the  major  growth 


32 


planes.  This  type  of  defect  can  generally  be  minimized  by  judicious  choice 
of  the  growth  parameters.  Other  than  these  defects,  the  crystals  appear  to 
be  high  quality  with  no  visible  index  changes  or  strain  birefringence. 

The  basic  habit  of  the  crystals  is  that  of  {100}  prism  faces  modified 
by  {lOl}  pyramid  faces  (see  Figures  20  and  21).  The  small  equidimensional 
crystals  show  a good  tetragonal  symmetry  with  all  of  the  faces  being  approxi- 
mately equal  in  size.  The  plate-like  crystals,  on  the  other  hand,  show  a 
decided  lowering  of  symmetry  to  that  of  a orthorhombic  crystal.  The  gross 
variation  of  habit,  i.  e.  , from  equidimensional  to  plate-like,  can  be  related 
either  to  the  growth  temperature  or  to  some  significant  change  in  the  growth 
mechanisms  of  the  crystal.  The  small  equidimensional  crystals  clearly  grew 
throughout  the  melt  when  the  crucibles  were  removed  from  the  furnaces  and 
as  such  grew  rapidly.  The  plate-like  crystals  grew  at  higher  temperatures 
throughout  the  program  cycle  of  the  furnace  and  consequently  at  a much  slower 
growth  rate.  Such  changes  in  habit  are  generally  assigned  to  some  major 
changes  in  the  crystal  growth  kinetics  such  as  growth  mechanisms,  super- 
saturation, etc.  In  addition,  changes  of  this  type  normally  involve  the  intro- 
duction of  new  faces  or  a major  reordering  of  growth  rates  the  existing  faces. 
This  particular  case  is  somewhat  unusual  in  that  all  the  faces  are  of  the  same 

type  and  the  change  of  morphologic  symmetry  primarily  related  to  a surface 
energy  change  of  the  (100)  and  (010)  planes.  This  is  unexpected  for  tetragonal 
crystals  where  one  would  anticipate  variations  only  in  the  c/a  lengths  of 
the  crystals  dependent  on  some  kinetic  change  of  the  growth  system.  In  the 
absence  of  twinning  or  some  recognizable  growth  feature  as  being  responsible 
for  such  a change  in  habit  one  must  look  elsewhere  for  its  cause.  It  is  un- 
likely that  impurities  could  affect  the  habit  in  this  way  for  the  (100)  and  (010) 
planes  in  the  tetragonal  crystal  system  are  equivalent  planes  and  should  not 
be  affected  differently.  About  the  only  remaining  cause  is  a structural  one. 

If  so,  and  the  full  morphologic  symmetry  is  applied  then  the  crystal  must 
have  existed  at  the  growth  temperature  with  a lower  symmetry  than  tetragonal. 
The  full  morphological  description  by  faces  type  being  (100)  » (010)  with  the 
( f 00)  > (100)  and  the  (011)  = (011)  with  (101)  » (101).  One  striking  feature  of 


33 


o 


o 


34 


Figure  21.  Flux  Grown  YVO^  Crystals 


35 


the  crystals  is  that  the  (101)  is  consistently  much  smaller  than  the  (101)  or 
is  absent.  This  implies  that  the  crystal  had  an  orthorhombic  distortion 
with  a^  ^2  anc^  a *oss  symmetry  along  with  a axis  with  a result  that  the 
(100)  and  (100)  as  well  as  the  (101)  and  (101)  planes  becoming  unequivalent. 
Optically,  the  crystal  appears  to  be  uniaxial  as  in  the  case  for  zircon. 


36 


III.  SPECTROSCOPY  OF  RARE  EARTH  IONS  IN  YVO, 

4 

A.  Introduction 

The  present  interest  in  rare-earth-doped  yttrium  orthovanadate 
(YVO^)  stems  from  recent  studies  [6,  7]  which  showed  that  an  experimental 
laser  rod  of  NdtYVO^  in  a pulsed-lamp  laser  configuration  had  a threshold 
at  1. 06  Mm  about  a factor  of  two  lower  than  a standard  quality  Nd:YAG  laser 
rod  in  the  same  configuration.  Furthermore,  the  performance  of  the  vana- 
date material  in  a CW  laser  configuration  was  comparable  to  the  garnet  even 
though  the  vanadate  sample  had  larger  scattering  losses  [8],  These  observa- 
tions arise  out  of  the  fact  that  thw  1,06  urn  laser  cross  section  in  YVO,  is 

4 

4*6  times  greater  than  that  of  NdrYAG.  In  addition,  the  1.34  (im  operation 
of  the  NdrYVO^  laser  completely  outperformed  that  of  NdrYAG  at  1.  32  Mm 
because  of  an  18  times  larger  laser  cross  section  of  the  vanadate  relative 
to  the  garnet  [8]  . 

The  first  study  cf  a laser  using  NdrYVO^  was  made  in  1966  by 
O’  Connor  [ 1 ] who  reported  a pulsed-laser  threshold  at  1 . 06  [xm  of  ~ 1 J. 
Difficulties  in  crystal  growth  prevented  this  work  from  progressing.  How- 
ever, recent  advances  in  the  growth  of  this  crystal  [3]  have  shown  that 
YVO^  is  now  a promising  laser  material.  This  is  especially  so  because  of 
its  very  desirable  mechanical,  optical,  and  physical  properties.  For  example, 
it  has  excellent  optical  finishing  properties  because  of  its  glass-like  hard- 
ness, it  has  only  a slight  tendency  to  cleave,  and  it  has  a high  laser-induced 
damage  threshold.  Since  it  is  a strongly  birefringent  uniaxial  crystal,  the 
dopant  transitions  are  polarized;  the  lasing  transitions  are  strongly  polar- 
ized parallel  (n -polarized)  to  the  optic  axis  (c-axis).  The  strong  bire- 
fringence makes  possible  electrooptic  Q-switching  without  an  intracavity 
polarizer  [6,  7]. 

Further  studies  of  NdrYVO^  were  described  in  1968  by  Bagdasarov 


37 


et  al.  [9]  and  in  1 969  by  Kaminskii  et  al.  [10].  These  papers  reported  not 

only  a low  threshold  for  lasing  (~2  J)  using  this  material,  but  they  also  gave 

3 + 

spectroscopic  data  for  transitions  of  Nd  at  4.2,77,  and  300°K.  The  work 

of  DeShazer  et  al.  [6]  and  of  Bass  et^  a_l . [7]  presented  energy  levels,  line- 

4 4 

widths,  and  peak  cross-sections  for  the  F , -*  I . fluorescence  transi- 

4 4 ^ ^ 11/2 

tions  and  energy  levels  of  the  F3/2^  !9/2  transitions  all  at  room  tem- 
perature as  well  as  laser  performance  data.  In  addition,  unpublished  spec- 
troscopic studies  by  Pressley  et  ah  [ 1 1 ] and  by  Karayianis  et  al,  [l  2]  have 
been  circulated  wherein  attempts  were  made  to  identify  the  energy  level 
scheme,  particularly  of  the  above  mentioned  manifolds.  Among  the  studies 
of  these  four  groups,  there  is  (1)  only  partial  agreement  as  to  the  positions 

4 

of  the  Stark  levels  in  the  I ground  level,  (2)  no  agreement  on  the  group 

theoretical  identity  of  the  levels,  and  (3)  no  explanation  of  the  absence  of 

4 4 

certain  lines  from  the  ^9/2  transit^on  grouP«  For  example, 

Bagdasar  ov  et  ah  [9]  and  Kaminskii  et  al.  [ 1 0]  did  not  report  on  polarized 
spectra  or  any  level  identities.  On  the  other  hand,  Karayianis  et  al . [12] 
and  Bass  et^  al . [7]  both  report  polarized  spectra,  but  their  level  identities 
do  not  agree. 

4 4 2 

In  the  work  described  here,  the  Ig/2  ^3/2  anc^  /2  P°^arizec^ 

4 4 4 

absorption  spectra  and  the  ^9/2  anc^  ^11/2  P°^ar^zec^  fluorescence 

spectra,  recorded  at  ~85°K  and  room  temperature,  are  presented  and 
analyzed.  We  show  that  the  spectra  provides  for  unambiguous  level  assign- 
ments. By  examining  the  details  of  crystal  field  theory  and  the  Judd-Ofelt 
[13]  theory  of  induced  electric-dipole  transitions  as  applied  to  Nd:YVO^, 
we  offer  some  possible  explanations  for  the  observed  relative  line  strengths. 


B.  Experiment 

The  samples  of  Nd:YVO^  studied  were  obtained  from  two  batches  of 
crystals  grown  by  Crystal  Products  Department,  Union  Carbide  Corporation, 


38 


San  Diego,  California*  The  first  batch  was  produced  by  Dess  and  Bolin 
[ 5 ] in  1 967-68,  and  the  second  batch  by  Rothrock  and  Wilder  [14]  in  1973- 
74.  Although  the  crystal  from  the  first  batch  had  a greenish  tint  added  to 

the  usual  sky  blue  color,  the  spectra  were  essentially  the  same.  This 

. 3 + 

green  tint  was  produced  by  color  centers  in  the  crystal.  The  Nd  concen- 
tration was  nominally  1 atomic  percent. 

The  absorption  measurements  were  made  usually  by  illuminating  the 
crystal  transversely  to  the  c-axis  with  parallel  light  from  a qua rtz -iodine 
tungsten  lamp.  This  allowed  the  Gian- Thompson  polarizer  to  be  set  either 
parallel  (n -polarization)  or  perpendicular  (a -polarization)  to  the  c-axis.  The 
experiment  is  shown  schematically  in  Figure  22. 

The  spectrograph  used  was  a 1 -meter  Czerny- Turner  mounting  fitted 
with  an  uncooled  7102  photomultiplier  which  was  connected  to  a lock-in  ampli- 
fier and  a log- converter  (the  latter  being  used  only  with  absorption  spectra). 
The  linear  reciprocal  dispersion  of  the  spectrograph  was  about  ]6A/mm  in 
first  order.  Corning  glass  filters  were  employed  as  needed  to  remove 
unwanted  orders  and  to  avoid  excitation  of  fluorescence  transitions  during 
the  absorption  measurements. 

The  fluorescence  experiments  were  performed  by  focusing  the  beam 
from  an  argon- la s er -pumped  Spectra-Phy sics  dye  laser  along  the  direction 
orthogonal  to  both  the  c-axis  and  the  observation  axis.  The  dye  laser  polari- 
zation was  parallel  to  the  c-axis  and  the  maximum  fluorescence  output  was 
obtained  with  the  excitation  set  at  about  583  nm.  The  dye  laser  power  was 
about  60  mW  incident  in  the  crystal. 

The  spectrograph  was  made  insensitive  to  the  incoming  polarization 
by  inserting  a calcite  wedge  in  front  of  the  slit  with  the  optic  axis  set  at  45° 
to  the  slit.  With  the  quartz-iodine  lamp,  we  observed  about  a 2%  change  in 
the  recorded  signal  for  a 180°  rotation  of  the  polarizer  with  respect  to  the 
polarization  requires  that  the  illumination  of  the  slit  be  reasonably  uniform 
along  the  height  of  the  slit  and  that  the  image  on  the  slit  cover  at  least  a 


39 


ABSORPTION  EXPERIMENT 


cr 

Ld  ^ 


to 


CM 


7 (T 

GO  M 

cl  cn 
Z2< 
<0-1 
-1X0 
CD  H Q- 


40 


Figure  22.  Experimental  arrangements  for  absorption  spectroscopy. 


few  millimeters  of  the  slit  height. 

Wavelength  calibration  was  accomplished  by  using  Osram  mercury 
or  neon  gas  discharge  lamps  and  superimposing  the  spectra  from  these 
lamps  on  the  experimental  spectra  by  a partially  reflecting  mirror  on  the 
optical  axis  of  the  spectrograph  entrance  slit. 


C.  Spectra 

Since  out  primary  objective  was  to  clarify  the  positions  and  identities 

4 4 4 

of  the  levels  of  the  *9/2  ground  state  and  of  the  ^j/2  anc*  F3/2  states  of 

interest  in  laser  applications,  we  emphasize  the  better  resolved  spectra 

taken  at  ~85°K;  however,  for  completeness  we  also  present  data  taken  at 

room  temperature. 

The  absorption  and  fluorescence  spectra  used  in  the  analysis  is  shown 
in  Figures  23  through  26.  All  these  spectra  shown  were  taken  using  a sam- 
ple 7.  8 mm  thick  taken  from  Boule  3L  of  Rothrock  and  Wilder.  Absorption 
spectra  taken  at  both  temperatures  with  boule  3L  samples  and  the  Bolin- 
Dess  samples  in  longitudinal  illumination  (i.  e.  , along  the  c-axis  and  with 
no  polarizer)  showed  excellent  agreement  with  the  corresponding  a spectra 
shown  in  the  figures,  both  in  line  positions  and  relative  strengths.  The 
strengths  of  these  longitudinal  a-spectra  were  a factor  of  two  larger  than 
their  corresponding  transverse  a-spectra  as  is  expected  from  the  simple 
theory  of  the  radiation  pattern  of  a a transition.  On  the  other  hand,  as  can 
be  seen  in  the  figures,  the  tt  -to-a  strength  ratios  do  not  follow  any  simple 
relationship.  These  ratios  can  be  understood  only  after  a careful  examina- 
tion of  the  J composition  of  the  crystal  field  levels  as  it  influences  the  transi- 
tion matrix  elements  obtained  from  the  Judd-Ofelt  theory  [13]. 


41 


ABSORBANCE  t''-MI0/I ) (cm'1 


4 2 

Figure  23.  Polarized  absorption  spectra  of  the  19/2"*  ^1/2 

tions  of  Nd:YV04  at  ~300°K.  The  letters  a,  b,  c, 

4 

denote  the  crystal  field  levels  of  the  I9/2  state, 
c-axis  was  transverse  to  the  observation  a&ifc. 


transi- 
and  e 
The 


42 


ABSORBANCE  >%(!„/!)  (cm") 


4 4 

Figure  24.  Polarized  absorption  spectra  of  the  I9 / 2 F3/2  transitions 

of  Nd:YVC>4  at  two  temperatures.  The  peak  of  the  flat-topped 
rr  - line  at  ~ 300°K  was  determined  to  be  at  18.  5 cm"', 

Crystal  oriented  as  in  Figure  23. 


43 


300°  K P ~85°K 


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transitions 


1 4i 

U 9/2  *1/2 

4 2 

The  spectra  (taken  in  third  order)  for  the  1^^  "*  ^1/2 

in  Figure  23  are  given  only  for  room  temperature  since  they  show  the  transi- 

4 

tion  originating  from  the  highest  level  of  the  1^^  man^°^.  This  transi- 
tion is  frozen  out  (i.e.,  the  initial  level  is  thermally  depopulated)  at  ~85°K. 
The  spectral  region  of  these  transitions  was  carefully  searched  at  both 
temperatures  and  polarizations  for  additional  lines  corresponding  to  transi- 
tions to  the  ground  state  levels  other  than  the  five  shown  in  Figure  23.  None 
were  found. 

We  do  see  in  the  n-polarization  spectrum  in  Figure  23  a weak  and 

very  broad  band  under  the  strong  line.  Similar  bands  are  found  in  nearly  all 

spectra;  yet,  they  were  too  weak,  too  broad,  insufficient  in  number,  and 

not  consistent  in  their  observed  pattern  to  be  considered  part  of  the  electronic 

3 + 

transitions  associated  with  the  primary  site  population  of  the  Nd  ions. 


2.  4I 


9/2 


3/2 


Figures  24  and  25  show  the  absorption  and  fluorescence  spectra  for 
4 4 

the  ^3/2  *rans  lt'lons  at  the  two  temperatures.  Because  of  the  large 

thickness  of  the  sample  used  to  obtain  these  spectra,  the  high- cross -section 
transitions  completely  absorb  the  incident  light  thereby  causing  these  lines 
to  become  flat-topped.  The  large  thickness  was  used  to  insure  that  all  perti- 
nent electronic  transitions  were  found. 

In  fluorescence,  the  strong  n transition  was  observed  to  be  quickly 
self-absorbed  as  the  excitation  beam  was  moved  back  from  the  sample  sur- 
face. Self-absorption  means  that,  since  these  transitions  terminate  on  the 
ground  manifold,  the  fluorescence  is  subject  to  absorption  during  passage 
out  of  the  sample.  As  seen  in  Figure  25,  some  residual  self-absorption 
remains  at  ~85°K  even  though  some  effort  was  made  to  place  the  beam  to 
within  a tenth  of  a millimeter  of  the  sample  surface.  An  inset  in  the  figure 


46 


shows  how  strong  self-absorption  occurs  when  the  beam  is  about  1-2  mm 
back  from  the  surface. 

In  absorption,  we  note  that  the  lowest  wavelength  line  which  appears 

in  a spectrum  at  ~85°K  also  appears  in  the  corresponding  tt  spectrum  as 

well  as  in  the  ~85°K  tt -fluorescence  spectrum.  This  behavior  is  also 
4 4 

observed  in  the  ^3/2  Ij  ^ ^-fluorescence  spectra  shown  in  Figure  26 
wherein  two  o lines  appear  on  either  side  of  the  strong  tt  line  in  the  low 
temperature  spectrum.  These  lines  are  not  apparent  in  the  corresponding 
room  temperature  spectra  because  of  interference  from  the  neighboring 
strong  tt  line.  These  observations  may  have  been  caused  by  polarizer  or 
sample  misalignment.  However,  the  lines  appeared  in  independent  experi- 
ments on  different  samples.  Thus,  we  are  led  to  the  possibility  that  the 

3 + 

selection  rules  are  broken  which  could  mean  that  the  Nd  site  symmetry 
is  lower  (i.  e.  , ) than  the  normal  symmetry  at  that  site. 

The  situation  is  complicated  by  the  fact  that  all  of  our  samples 
showed  strong  and  complicated  strain  patterns  when  viewed  along  the  c-axis 
between  cross  polarizers.  These  patterns  would  completely  change  with 
only  slight  changes  in  the  sample  orientation.  When  viewed  perpendicular 
to  the  c-axis,  comparatively  few  patterns  were  observed  with  good  extinc- 
tion being  achievable  at  the  appropriate  orientations.  Thus,  it  is  possible 
that  the  anomoly  described  above  is  produced  by  crystal  imperfections  such 
as  would  produce  wandering  of  the  c-axis  through  the  crystal. 

Bagdasarov  [9]  reported  two  sites  which  they  designed  I and  II. 

Our  results  are  in  good  agreement  with  their  Stark  level  positions  for 
type  I sites.  We  do  not  observe  any  lines  which  we  can  identify  with  type  II 

sites.  In  addition,  they  reported  weak  lines  on  the  long  wavelength  wings 

4 4 

of  the  strong  0 lines  in  the  ^3/2"*  ^11/2  ^uorescence  spectrum  at  77°K 

which  they  called  "companions.  M We  see  similar  lines  on  the  strong  0 
lines  in  the  absorption  spectrum  for  ~85°K  shown  in  Figure  24.  These 
lines  are  spaced  about  1 cm  * less  than  their  strong  neighbors.  The 


47 


sharpness  of  these  weak  lines  suggests  that  they  are  from  a well  defined 
3 + 

Nd  site,  and  their  smaller  spacing  indicates  a slightly  weaker  crystal 
field.  Examining  the  crystallographic  data  given  by  Wyckoff  [1  5J  for  crystals 
having  the  zircon  structure  illustrated  in  Figure  27,  we  calculate  a yttrium- 

o 

oxygen  nearest-neighbor  spacing  in  YVO  to  be  2.  296  A . Using  the 

o I o | ^ ^ 

following  radii,  Nd  -1.08  A,  Y - 0.93  A,  and  O -1.40  A,  we  find  the  Y-O 

3-I- 
near est- neighbor  spacing  of  the  Y site  to  be  0.  184A  smaller  than  the 

34  o 34 

radius  of  the  Nd  ion  as  compared  to  a 0.034  A mismatch  for  the  Y ion. 

34 

The  mismatch  of  Nd  is  certainly  sufficient  to  introduce  the  possibility  of 

a site  arising  from  a slight  well-defined  distortion  of  the  basic  symmetry 

3+  2d 

normally  present  at  the  Y site 


3‘  4F3/2Al/2 

The  fluorescence  spectra  at  room  temperature  and  ~85°K  for  the 
4 4 

^2/Z^  *11/2  ^rans^*lons  are  g’lven  in  Figure  26.  After  group  theory  there 

should  be  1 2 a and  6 tt  lines.  Only  the  low  temperature  a spectrum  shows 
the  required  12  lines.  In  the  tt  spectrum,  neglecting  the  2 anomolous  G 
lines  discussed  above,  we  have  only  4 lines.  We  propose  that  these  two 
anomalous  G lines  are  not  the  two  missing  tt  lines.  In  support  of  this  claim 
is  the  fact  that  in  all  the  other  spectra,  a TT  line  is  never  significantly  in- 
creased in  strength  by  changing  to  G polarization  contrary  to  the  behavior  of 
the  anomolous  G lines.  The  strong  TT  line  appears  in  a polarization  as  the 
second  of  the  four  strong  lines,  counting  from  the  short  wavelength  end.  We 
shall  identify  the  third  line  of  this  group  as  being  one  of  the  missing  TT  lines. 
This  line  can  be  seen  on  the  long-wavelength  side  of  the  strong  tt  line  only 
as  an  asymmetry  in  the  lower  half  of  the  strong  TT  line. 

The  spectra  given  in  Figure  26  for  ~85°K  was  not  taken  with  sufficient 
gain  to  reveal  the  "companion”  lines  discussed  in  the  previous  subsection. 

With  higher  sensitivity,  we  observe  the  companion  lines  reported  by 

4 4 

Bagdasarov  L 9 ] for  the  F^^"4  Ij  ^ transitions. 


48 


D.  Analysis 


1.  Site  Symmetry 
i structure  of  YVO 

to  the  space  group  D„u  [15].  The  Y"51^  site  symmetry  in  which  the  Nd 


The  structure  of  YVO^  is  that  of  zircon  which  is  tetragonal  and  belongs 


4h 


,3+  . 


ions  are  found  is  D_,«  Referring  to  Figure  27,  the  Y ion  is  at  the  cen- 

2d  2- 

ter  of  a tetrahedron  formed  by  four  nn  O ions.  The  reduction  to 
symmetry  arises  from  the  fact  that  this  tetrahedron  is  shorter  along  the 

c-axis  than  the  corresponding  dimensions  perpendicular  to  the  c-axis. 

3 + 

In  addition,  this  irregular  tetrahedron  is  surrounded  by  four  nn  Y ions 
2- 

and  their  O tetrahedra  which  are  located  below,  left  and  right,  and 

above,  front  and  back,  of  the  site  in  question.  These  four  Y-O  tetrahedra 

form  a larger  irregular  tetrahedron  at  the  center  of  which  is  the  site  in 

question.  This  large  tetrahedron  is  oriented  90°  from  the  orientation  of 

5+  3 + 

the  Y-O  tetrahetron  at  its  center.  The  V ions  are  not  seen  by  the  Y 

5 + 

ions  in  the  first  approximation  since  each  V ion,  due  to  its  small  size 

t 2- 

(0.  59A  ) is  completely  shielded  by  a tetrahedron  of  O ions. 


This  intermingling  of  tetrahedra  produces  two  kinds  of  equivalent 
Y (hereafter  the  superscript  for  charge  is  suppressed)  sites  related  to 
each  other  by  a 90°  rotation  about  the  c-axis.  It  is  possible  that  the  mis- 
match between  Nd  and  the  Y site  described  in  the  previous  section  could 
remove  the  equivalence  of  a fraction  of  these  two  sets  of  sites  thereby 
giving  rise  to  another  set  of  sharp  lines. 

We  also  note  that  neodymium  ions  located  in  nn  Y sites  would  be 
expected  to  see  a significantly  lower  symmetry  and  larger  crystal  fields. 
It  is  possible  that  the  lines  identified  as  site  II  by  Bagdasarov  [9  ] 
are  from  Nd  ions  in  double  clusters  since  their  spectra  were  taken  with 
samples  having  about  twice  the  Nd  concentrations  as  our  samples  which 
makes  the  concentration  of  double  clusters  four  times  larger  in  their 
samples  compared  to  ours. 


49 


o< 


v a> 


O' 


tL  *> 
>*  . u 
w rt 

0 V 
rj  rd 

o ^ 

1 r-  V 
-£—*  nj 

Q £ *8 

"—  a; 
— t xju: 

<D  L 

U r>  -4-> 

+>  ^ £ 


c 

a 


rt 
C 
o 
W> 

co  JS 


s s 

O «J 

w X 

c o 


I 

£ 

a 


a> 

J3 

H 


c 

8 xi 
, rt 
zd  C 
a>  crj 

a > 


6 

rt 

c 

rt 

> 


b- 

(NJ 

a> 

W) 

£ 


50 


have  been  omitted  from  the  cell  to  enhance  clarity. 


2.  Electric  Dipole  Transitions  Between  Crystal-Field  Levels 

The  importance  of  Nd:YVO^  is  in  the  larger  cross  section  and  the 

corresponding  higher  gain  of  the  laser  transition  compared  to  the  laser 

transition  in  Nd:YAG  [6,7],  A n understanding  of  this  difference  can  be 

obtained  by  analyzing  how  the  crystal  fields  of  the  two  hosts  influence  the 

2S  + 1 

dipole  oscillator  strengths  of  transitions  between  the  L manifolds  of 

j 

rare  earth  ions  in  crystals  can  be  expressed  as 

fT.Tz  = X VT  (2J  + if1  |<  [tSL]j||  U(t)||  [t'SL']J'>|2  (1) 

J J t=2, 4, 6 

where  V is  the  center-of-gravity  frequency  of  the  transition  group,  the  parame- 
ters includes  quantities  which  characterize  the  opposite-parity  configu- 
rations and  the  strength  and  symmetry  of  the  crystal  field,  the  reduced 
matrix  elements  are  of  the  unit  tensor  calculated  in  the  intermediate 
coupling  scheme,  and  the  remaining  symbols  have  the  usual  meanings. 

The  usual  procedure  is  to  fit  the  parameters  using  experimental  oscil- 
lator strengths.  Unfortunately,  this  approach  does  not  predict 
the  oscillator  strengths  of  transitions  between  specific  crystal  field  levels. 

In  fact,  the  parameters  cannot  be  used  to  determine  these  strengths 
since  the  scheme  by  which  the  available  oscillator  strength  is  portioned 
out  to  the  symmetry-allowed  transitions  is  directly  determined  by  the 
specific  distribution  and  the  type  of  ions  surrounding  the  rare-earth  ion 

and  the  J content  of  the  crystal-field  levels  (which  is  also  directly 
z 

related  to  the  surrounding  environment  of  ions),  while  both  of  these  details 

are  removed  from  T parameters  by  summations  over  all  possible  values. 

As  it  will  be  shown,  it  is  these  details  of  the  crystal  field  interaction  with 

Nd  that  make  the  YVO,  host  of  special  interest.  To  make  this  evident,  we 

4 

shall  draw  on  comparisons  with  YAG  and  CaWO^. 


51 


Equation  (1)  is  obtained  from  a more  general  expression  of  the  Judd- 

Ofelt  [l  3]  theory  which  includes  an  accounting  of  the  details  of  the  crystal 

field  and  the  J mixing.  A useful  form  of  this  expression  for  the  oscillator 
z 

strength  of  a transition  between  two  crystal  field  levels  a and  0 for  polari- 
zation orientation  ? is  given  by 


f = V 

a-»pe  a0 


+ !>«;<*'>£  s'(k,t)£  (-d’  +Pe  (,)V 


q,P 


.(t) 


q+P\p  -(q+p)  q 
t=  2,4,6,  k = 1 , 3,  5,  7,  |q|<k,  p=  0,  +1, 


(2) 


where  V is  the  transition  frequency,  the  ( U^)  are  the  matrix  elements 

a8 

which  are  the  same  as  in  Eq.  (1),  the  H (k,  t)  are  parameters  which  contain 

quantities  that  characterize  the  opposite-parity  configurations  which  are 

responsible  for  inducing  the  electric  dipole  transitions  within  the  4f  con- 

(])* 

figuration  and  other  constants,  and  the  e are  the  complex  conjugates 

P 

of  the  polarizer  components  in  tensor  form  where  p = 0 corresponds 
to  rr  transitions  and  p=  1 1 are  for  a transitions.  The  A are  the  parame- 

q 

ters  of  the  odd-parity  terms  (i.  e.  , k odd)  in  the  usual  multipole  expansion 
of  the  crystal-field  potential  energy  Vc.  They  are  functionally  dependent  on 
the  coordinates  of  the  surrounding  charges.  We  note  that  these  odd- 
parity  terms  can  only  be  non-zero  in  sites  lacking  inversion  symmetry. 

The  quantities  X p are  g^ven 


r(t)L  « = E C*  (J  ) Cft  (J  ')  (-1) 

q+p  |-£/  a Z p z 


J-Jz  / J t J' 

\-Jz  q + P K 


(3) 


where  the  Cs  are  the  J -mixing  coefficients  and  the  %>' s are  integers  that 


specify  which  J values  are  present  in  the  corresponding  states,  and 


52 


therefore,  which  are  to  be  considered  in  the  summations  of  Eq.  (3).  The 
values  of  the  J^-mixing  coefficients  are  obtained  from  the  crystal  field 
calculation  which  requires  detailed  knowledge  about  the  spectra.  This  cal- 
culation involves  products  in  Vc  of  the  form 


Vc  * 


(4) 


where  k = 2,4,6  only  and  the  3-j  symbol  is  identically  zero  when  the  num- 
bers in  the  top  row  cannot  form  a triangle  or  when  the  sum  of  numbers  in 
the  bottom  row  is  not  zero.  In  the  absence  of  any  external  fields,  the  states 
of  the  ion  are  specified  by  a single  value  of  J.  However,  the  3-j  symbol 

in  Eq.  (4)  connects  states  having  different  J and  J values.  Thus  J and 

z 

J are  no  longer  good  quantum  numbers  in  the  presence  of  a crystal  field, 
z 

In  the  description  of  crystal-field  splitting,  Hellwege  [16]  showed  that 
for  sites  having  a well-defined  p-fold  rotational  symmetry  axis,  the  J 

z 

composition  of  a crystal-field  level  is  determined  by  a crystal-field  quan- 
tum number  as  given  by 

Jz=H  + § p s p (mod  p)  (5) 

where  p is  the  fold  symmetry  of  the  axis  of  the  crystal  field  (assuming  only 

non-cubic  symmetries),  and  ? = 0,  t 1 , t 2,  • . • In  NdrYAG,  the  Nd  site 

symmetry  is  with  p = 2.  However,  in  Nd:YVO^,  the  site  symmetry  is 

D.  which  includes,  in  addition  to  three  2-fold  rotational  axes,  a S sym- 
2d  4 

metry  operation  which  is  a pure  rotation  of  90°  followed  by  a reflection 
in  a plane  perpendicular  to  the  axis  of  rotation  about  one  of  these  axes 
(i.  e.  , the  z axis).  As  the  result  of  this  operation,  Eq.  (5)  is  no  longer 
sufficient  to  describe  the  decomposition  of  an  arbitrary  J state  in  a D 
crystal  field.  This  can  be  understood  by  determining  the  requirements 
that  the  operation  places  on  the  crystal-field  wave  functions. 

In  general,  the  states  associated  with  a crystal-field  level  a of  a 


53 


given  J manifold  can  be  written  as 


,aM)  =Zca(MJz)  |JZ>  ’ 


(6) 


where  the  (|iJ  ) are  the  same  as  in  Eq.  (3)  and  the  summation  is  over 
values  of  ? to  be  determined.  The  and  operations  are  equivalent 
to  a 4-fold  rotation  followed  by  inversion  as  specified  by  IC  and  IC  , 

f r 

respectively.  A p-fold  rotation  operation^  (2rr/p)  followed  by  the  inver- 
sion operation  J can  be  expressed  as  [15] 


J lap)  = S I a.U>  » (7) 

where^/  = £)  ( 2 tt  / p ) and  the  operations  are  defined  as  follows: 


JMli 


EAj 

(x,  y,  z)  = ill  (-x,  -y,  -z)  = (-1)1  ill  (x,y,  z), 


and  2ttJ 

, z 

JD  ( 2 tt  / p)  'I'j  (r,  P,  Cp)  = ijij  (r,  0,<P  + 2n/p)  = el  P ijr  j (r,0,cp), 
z z z 

th 

where  £.  is  the  orbital  angular  momentum  quantum  number  of  the  i electron 

in  the  configuration  of  interest.  Substituting  Eq.  ( 6 ) into  Eq.  (7  ) allows 

the  states  to  be  separated  into  classes  of  states  having  a common  phase 

factor  specified  by  which  depends  on  whether  the  configuration  has  even 

parity  (i.  e.  , even)  or  odd  parity  (i.  e.  , ££.  odd).  If  the  configuration 

i 1 i 1 

is  even,  Eq.  (5)  is  obtained.  If  the  configuration  is  odd,  as  it  is  for  Nd, 
then  we  find  for  the  Sp  operation, 

M=  V 2 +?P- 

Since  £ LS  a running  index  which  can  have  either  sign  and  has  no  physical 

significance  of  its  own,  the  two  sign  choices  in  the  above  expression  gives 

the  same  result  for  a given  J 1 = J value.  Therefore,  we  chose  to  use 

z'max 


54 


J = (m  + +“)  (mod  p)  . (8) 

z Z 

The  tables  of  Koster  et  al»  [lTj  show  that  in  D symmetry,  crystal- 

3 2 

field  levels  arising  from  a J state  of  the  4f  configuration  of  Nd  are  of 

only  one  irreducible  representation  (rep)  namely  T-  with  U - (i.  e.  , 

doubly  degenerate).  Whereas,  in  D symmetry,  two  doubly  degenerate 

Zd 

reps  are  pos  s ible,  namely  I\  with  [x  = +1/2  and  T_  with  (a  = f 3 / 2.  The  J 

o “ 7 z 

values  permitted  in  the  crystal-field  rep  of  the  symmetry  using 
Eq.  (5)  with  p = 2 are  as  follows: 


For|j  = +1/2,  §=  0,  1,  -1,  2,  -2,  3,  -3,  .... 

J = 1/2,  5/2,  -3/2,  9/2,  -7/2,  13/2,  -11/2, 
z 


and  for  |J  = -1/2,  ? = 0,  1,  -1,  2,  -2,  3,  -3,  ..., 

J = -1/2,  +3/2,  -5/2,  +7/2,  -9/2,  11/2,  -13/2,... 
z 

Likewise  for  the  Ty  and  reps  of  symmetry,  we  obtain  the  following 

values  for  Nd  from  Eq.  (8)  with  p = 4. 

For|j=-3/2,  ?=0,  1,  -1,  2,  -2,  ..., 


U=  +3/2, 
M=  -1/2, 


J = 1/2,  9/2,  -7/2,  17/2,  -15/2,  ..., 
z 

? = 0,  1,  -1,  -2,  -3,  .... 

J =7/2,  15/2,  -1/2,  -9/2,  -17/2,  .... 
z 

5=0,  1,  -1,  2,  -2, 

J =3/2,  11/2,  -5/2,  19/2,  -13/2,  ..., 
z 


and  for  |J=  +1  /2,  5=0,  1,  -1,  -2,  -3,  .... 

J = 5/2,  13/2,  -3/2,  -11/2,  -19/2, 


In  symmetry,  the  free-ion  states  split  as  follows  [17,  18]: 
2 

P , -» r 
1 / 2 5 

-+  2T 

3/2  5’ 


W5V 


w-s- 


55 


In  D2d  symmetry,  for  4f  , an  odd-parity  configuration,  we  find 


•p  -»  r 
1/2  A7* 


f -*r  + r 

3/2  67’ 


W*VSr7 


I -4  3*p  -i-  3p 

11/2  6 x7  • 


We  note  that  in  even-parity  configurations,  F^  and  T exchange  places  in 

the  above  list.  Thus,  in  YAG,  the  two  crystal-field  levels  belonging 
4 

to  the  state  each  can  have  a J composition  consisting  of  a mixture  of 

3/2  z r ° 

J = t 1/2  and  t 3/2.  On  the  other  hand,  in 


ind 


I\(|i  = + 1/2),  pure  J = 4 3/2, 
o z 


r_( n = + 3/2),  pure  J =4.  1/2. 


Similarly,  in  Nd:YAG 

for  4I  r (M=  ± 1/2),  mixed  J = ±1/2,  43/2,  ±5/2,  47/2,  +9/2, 

V / Z 5 z 

and  for  4I  . , rc( \l  = ±1  /2),  mixed  J =±1/2,  43/2,  ±5/2,  47/2,  ±9/2,  +11/2. 
11/25  z 

Whereas,  in  Nd:YVO„ 


for  4I 


9/2’ 


and  for  I 


r,(U=  ±1/2),  mixed  J =+3/2,  ±5/2, 
o z 

r7(U=  ±3/2),  mixed  J = 4I/2,  +7/2,  49/2, 
f z 

I\(|i  = ±1/2),  mixed  J = +3/2,  ±5/2,  +11/2, 
o z 

r (H=  ±3/2),  mixed  J =+1/2,  +7/2,  +9/2. 

f z 

It  should  be  noted  that  from  Eq.  (4),  the  values  permitted  in  a given 
state  cannot  be  changed  by  J mixing  unless  the  symmetry  is  changed. 


11/2’ 


56 


The  differences  between  these  two  symmetries  are  significant  when 

k 

considering  Eq.  (2).  In  symmetry,  the  non-zero  A parameters 

occur  for  all  possible  odd  values  of  k with  |ql  = 2,4,6  and  *q  < k.  However, 

3 5 7 7 

in  D symmetry,  onlyA^,  A A and  A ^ are  non-zero,  in  general. 

The  two  3 - j symbols  that  appear  in  Eqs.  (2)  and  (3)  govern  which  parame- 

k ...  44 

ters  A are  active  in  a given  transition.  Thus,  for  the  *9/2^  ^ ^3/  Z 

transitions,  t = 4,  6 and  k = 3,  5,  7.  Since  all  permitted  values  of  q can 

occur  in  symmetry,  then  from  the  rule  on  the  bottom  row  of  the  3-j 

symbol  in  Eq.  (3),  namely 

J = J ' + 0 + q, 

•7  7 


(9) 


it  is  clear  that  all  transitions  are  permitted  in  both  TT  and  a polarizations. 

This  is  really  trivial  because  with  only  one  crystal  field  state,  viz.  IT,  this 

5 

must  follow  logically. 

In  D symmetry,  since  q = + 2,  +6  then  we  have  from  Eq.  (9)  that 
Zd  “ 

J = J / + 0 i 2,  and  J - J / f p + 6, 


4 4 

Using  this  relation,  Table  4 is  obtained  for  the  *9/2  **  ^3/2  transltlons* 

The  significant  fact  obtained  from  Table  4 is  that  the  transitions  which 

4 

couple  to  the  T crystal  levels  of  the  I . state  depend  on  the  contributions 

3 5 7 7 

to  Eq.  (2)  of  the  ^ 42  * ^ +2  ^ +2  *errns  relative  to  that  of  A ^ • Thus  . 

if  one  of  the  IT  levels  in  that  state  had  pure  or  nearly  pure  |J  | = 9/2  compo- 

7 z 

sition  and  the  A term  was  dominant,  then  the  TT  transition  with  the  state 

and  the  a transition  with  the  T, j state  would  be  expected  to  be  stronger 

than  the  a transition  with  the  state.  Also,  a transition  with  a given  level 

having  |j  | = 3/2,  5/2  composition  (i.  e.  , T^)  would  be  comparatively  weak 

if  not  completely  missing.  On  the  other  hand,  if  q was  restricted  to  +2  due 

7 

to  the  smallness  A , then 


57 


Table  4. 


Transitions  permitted  by  the  3-j  symbol  in  Eq.  (3)  for  the 

4 4 3-1-  -a 

I q i 2^*  ^3/2  ^ransitions  of  Nd  in  D2J  symmetry. 


J 

0 

j' 

z 

q - +2 

z 

q = ±6 

0 

+1  /2 

+5/2,  -3/2 

- - 1 

(r6) 

TT  ' 

-1/2 

(r7) 

0 

-5/2,  +3/2 

“ “ 

r+i 

+ 1/2 

+7/2,  -1/2 

-9/2 

cry 

+i 

-1/2 

+ 5/2,  -3/2 

- - 

<r6> 

a 1 

-1 

+ 1/2 

+3/2,  -5/2 

- - 

<r6> 

.-1 

-1/2 

+1/2,  -7/2 

+9/2 

(r7) 

0 

+3/2 

+7/2,  -1/2 

-9/2 

TT  ' 

(TV) 

(T7) 

0 

-3/2 

6 +1/2,  -7/2 

+9/2 

'+1 

+3/2 

+9/2,  +1/2 

-7/2 

<r7) 

+1 

-3/2 

+3/2,  -5/2 

_ _ 

<r6) 

a ' 

-l 

+3/2 

+ 5/2,  -3/2 

- - 

<r6> 

-3/2 

-1/2,  -9/2 

+7/2 

<r7» 

a.  See  text. 


58 


r?  (|jj  = 9/2)  n->  r6  and  a-»r? 


would  not  be  observed  or  would  be  very  weak. 

4 4 

Applyingthe  above  analys  is  to  the  F^^*— > *9/2  trans^lons»  we  would 

expect  to  find  10  lines  in  the  Nd:YAG  spectrum  which  is  the  case  f 1 7]. 

However,  from  Table  4,  we  have  sufficient  reason  to  expect  lines  to  be 

missing  from  the  spectrum  of  Nd:YVO^.  The  symmetry  allowed  transitions 

in  the  host  are  found  from  Eq.  (8),  where  [i  - - A|i  = AJ  (mod  4),  which 

z 

becomes,  from  Eq.  (9), 


A(i  = ( p + q)  mod  4,  q = f 2,  f 6 . (10) 

The  selection  rules  which  result  from  Eq.  (10)  are  Ajj  = +2  for  tt  polari- 
zation and  A)i  ( P = +1 ) = 1 1 , +3  for  a polarization  and  are  summarized  in 
Table  5.  Applying  these  rules  to  the  transitions  in  question  indicates  we 
should  observe  10  lines  in  a polarization  and  5 lines  in  TT  polarization.  The 
low  temperature  fluorescence  spectrum  given  in  Figure  25  shows  only  8a 
lines  and  3 tt  lines  with  one  tt  line  very  strong  supporting  the  implications 
derived  from  Table  4, 


3.  The  P t State  in  D Symmetry 
1/2  2d 

2 

The  2-fold  degeneracy  of  the  Pj/2  s*'a*e'  being  of  magnetic  origin 

(i.  e.  , spin)  cannot  be  split  by  a crystal  field.  Furthermore,  the  spin 

4 

selection  rule  AS  = 0 forbids  transitions  between  the  I ^ ground  state  and 

a doublet.  However,  Rajnak  [19]  has  shown  that  the  "free-ion"  eigen- 

2 

vector  for  the  energy  level  associated  with  the  P . state  contains  a signi- 

4 

ficant  admixture  of  the  ^\/2  s*a*e  which  will  accept  transitions  from  the 

ground  manifold.  Thus,  by  observing  these  transitions,  it  should  be  possible 

to  unambiguously  locate  and  identify  the  levels  in  the  ground  manifold.  From 

Table  5 , there  can  be  5 a lines  and  only  2 tt  lines  between  2l\  + 3T  levels 

o 7 


59 


Table  5. 

Electric  dipole  selection  rules 

in  D , Symmetry a 
Zd 

r6(i/2) 

r?(3/2) 

r6o/2) 

a 

rr  a 

r7(3/2) 

tt  a 

a 

a.  The  quantities  in  parentheses  are  the 
crystal  field  quantum  numbers  |p|. 


60 


and  one  level.  Figure  23  shows  2 rr  lines  but  only  3 a lines.  This  clearly 

fixes  the  two  I\  levels  in  the  ground  manifold  and  implies  that  the  ground 
6 

state  is  I*  . The  missing  a lines  can  be  assumed  to  be  due,  at  least  in  part, 

to  the  details  of  the  J compositions  of  the  levels  associated  with  the  missing 

z 

lines. 


E.  Energy  Level  Scheme 

4 it  2 

The  spectra  in  Figures  23-25  show  that  one  of  the  ^9/3  i/2 

transitions  originates  from  a level  that  also  couples  to  one  of  the 

4 

F / levels  in  n polar ization.  This  means  that  choosing  the  label  T_  for 

J f L*  ■ 

the  2p  level  must,  if  we  follow  Table  5,  fix  the  order  of  levels  in  the 

4 * ^ 

F3/2  state  to  be  Fy  ( = +3/2)  high  and  T^([l  = +1/2)  low  in  energy.  Since 
the  ground  state  couples  to  the  lower  level  in  tt  polar  ization,  then  the  ground 
state  must  be  T ^ as  found  in  Section  D.  3.  above.  From  EPR  studies  of 
Nd:YVO^,  Ranon  [20]  reported  that  the  ground  state  could  only  be  fitted  to 

a linear  combination  of  the  |j  I values  1/2,  7/2,  and  9/2.  From  Table  4, 

1 z 1 

this  corresponds  to  a r level  consistent  with  our  findings. 

As  previously  suggested  [12],  because  of  the  similarity  between  the 

4 

crystal-field  expansions  for  CaWO^  and  YVO^,  the  direction  of  the  FQ  ^ 

splitting  in  the  two  hosts  should  be  consistent  with  the  sign  A^.  This  comes 

from  Eq.  (4)  which,  for  J'  = J = 3/2,  only  k = 2 gives  a non-zero  value. 

2 

The  sign  of  the  A parameter  can  easily  be  found  from 


E_  2 _ , 3-,  2 2.  . ; 

r e Q./r.  ] (3z.  - r.  ) / r. 

J J J J J 
J 


.th  . 


where  e is  the  electronic  charge,  -eQ.  is  the  charge  of  the  j ion,  r.  is  the 


J 


.th  . 


J 


radial  separation  between  the  site  center  and  the  j ion  where  z.  is  the 
corresponding  z component,  and  the  summation  is  taken  over  all  the  ions 
surrounding  the  site.  If  all  the  ions  or  groups  of  ions  of  the  same  kind  are 
located  at  the  corners  of  regular  tetrahedra  having  a common  center  at 


61 


£ 

which  the  Nd  ion  is  located,  then  z.  = +r.  If  3 and  A ^ = 0.  In  D _ symmetry, 

j j 0 2d  7 

as  described  in  Section  D.  1 • , the  tetrahedra  are  shorter  in  the  z direction 

2 2 

than  in  the  x and  y directions.  Therefore,  z.  < rj  /3  and  since  the  net 

charges  of  the  surrounding  ions  are  negative,  A ^<0  as  was  reported  for 

Eu3+  in  YV04  [21]  and  for  Nd:YVC>4  [10,  12].  The  sign  of  in  CaWC>4  has 

been  reported  to  be  positive  [22]  with  the  (j  = ±3/2  level  split  down  consistent 

with  our  results  for  YVO,. 

4 

4 

Having  established  the  ordering  of  the  states  in  the  manifold 

as  described  above,  the  identity  of  the  four  observed  transitions  in  the 
4 n 4 

F ^ ±11/2  sPectrurn  can  be  established.  In  the  discussion  concern- 

ing the  anomolous  appearance  of  two  of  the  strong  a lines  in  the  rr  spectrum, 
we  concluded  that  there  is  a fifth  TT  line  in  the  long  wavelength  wing  of  the 

strong  tt  line.  This  is  sufficient  to  complete  the  specification  of  the  6 levels 

4 

to  be  alternating  H and  II  with  the  lowest  level  of  the  I . manifold  being 
67  11/2 

rr 

The  energy  level  scheme  based  on  the  above  deductions  is  given  in 

Figure  28  for  room  temperature.  Also  shown  are  the  observed  transitions. 
The  experimental  frequencies  of  these  transitions  taken  at  room  tempera- 
ture and  ~85°K  are  presented  in  Table  6.  The  line  widths  and  peak  cross 
sections  of  the  ^F^^  ^4^^i]/2  trans^lons  a^  roorn  temperature  were  also 
measured.  These  results  are  given  in  Table  7.  The  strengths  were  deter- 
mined by  comparing  the  fluorescence  intensities  to  the  intensity  of  the 

4 4 4 4 

*9/2^  F3/2^  resonance  line.  The  laser  transition  F^2(a)  *11/2^ 

is  at  10,640.  9 + 0.  2 A and  is  predom inantly  tt  polarized.  It  was  found  to  have 

a peak  cross  section  of  4.  6 times  greater  than  that  of  the  1.  064  jam  laser 

- 1 9 2 

transition  in  Nd:  YAG  which  has  been  found  to  be  6.5x10  cm  f 9]. 


62 


O-  POLARIZATION 


r7- 


7 r POLARIZATION 
23036  cm'1 


r7- 


r7- 


r7- 


r7- 


437 


201 

174 

112 


11380 
1 1 365 


2180 

2151 


(2062.3) 
■ 2046 
. 1988 

1968 


Figure  28.  Energy  levels  (+  1 cm  ) of  selected  states  of  Nd:YVO^ 
at  room  temperature  showing  transitions  resolved  at 
~85°K.  The  approximate  positions  of  the  levels  at~85°K 
are  shown  as  short  dashed  lines,  (a)  This  is  the  ~85°K 
value.  See  Table  6. 


63 


3-1- 

Table  6.  Observed  Transitions  of  -1  Atomic  % Nd  in  YVO,. 

4 


Transition 

_ , . . b 

Polarization 

v . 
air 

~85°K 

(cm-  * ) 

~300°K 

4T  2_ 

*9/2"*  pi/2 

a - a 

a 

23  040.4 

23  036.  3 

b - a 

a 

22  928.  9 

22  922 

c - a 

a , tt 

22  866. 1 

22  863 

d - a 

- 

n/o 

n/ o 

e - a 

TT 

n/o 

22  600 

4 4 

F3/2  44  T9/2 

a - a 

a , tt 

11  368.  1 

1 1 365.4 

a - b 

a , tt 

1 1 258.  6 

11  253. 2 

a - c 

- 

n/o 

n/o 

a - d 

a 

11  1 58. 2 

~11  164 

a - e 

a 

10  931 

10  929C 

b - a 

a,  (tt) 

11  386.  1 

11  379.  6 

b - b 

a 

11  276.4 

11  26 7C 

b - c 

a 

11  211. 2 

11  20  5.  5 

b - d 

_ 

n/o 

n/o 

b - e 

a,  tt 

10  948 

10  943 

4 4 

F3/2"*  Ill/2 

a - a 

a , tt 

9 400.  9 

9 397.  7 

a - b 

a,  (tt) 

9 379.  9 

9 377.  5 

a - c 

a , tt 

9 320.  8 

9 319.  1 

a - d 

a 

9 306.  2 

n/o 

a - e 

a , tt 

9 213.  5 

9 214.  8 

a - f 

a 

9 186.  7 

9 18  5.  9C 

b - a 

a,  (tt) 

9 418. 6 

9 411. 9 

b - b 

a , nd 

9 397.  7 

9 391. 6C 

b - c 

a 

9 338. 2 

9 333.  7 

b - d 

a,  nd 

9 323. 5 

n/o 

b - e 

a 

9 230.6 

9 228.  8 

b - f 

a,  tt 

9 203.8 

9 200.  0 

Values  given  to  0.  1 cm'*  are  accurate  to  + 0.  5 cm“^  or  better. 
All  other  values  are  to  + 1 cm“*. 


a.  See  Figures  1-4  for  traces  of  spectra,  n/o  means  ’’not  observed.  ” 

b.  The  a transitions  which  appear  weakly  in  tt  polarization  are  denoted 
by  (TT). 

c.  These  values  had  to  be  deduced  from  other  values  because  of  inter- 
ference from  neighboring  lines. 

d.  This  polarization  was  not  resolved.  See  text. 


64 


Table  7.  Parameters  for  F , -*  I . Transitions  of  Nd: YVO  at  Room  Temperature 


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65 


Comparing  the  spectra  given  in  Figures  25  and  26  with  Figure  28 
and  Table  7,  we  note  that  the  two  strongest  fluorescence  lines  are  the  a + a 
transitions  with  the  corresponding  b a transitions  among  the  strongest  in 
the  O spectra.  As  mentioned  in  Section  D.  2.  , this  is  the  behavior  predicted 

from  Table  4 for  the  transitions  to  a T state  having  a large  *J  | = 9/2 

7 7 z m 

composition  where  the  A_^  parameter  is  dominant.  Although  this  is  the 

only  case  in  Table  4 that  could  clearly  produce  one  strong  line  while  dis- 
criminating against  the  remaining  lines  in  n polarization,  other  possibilities 
may  exist.  It  is  sufficient  to  recognize  that  Table  4 predicts  the  possibility. 


It  is  interesting  in  this  regard  to  compare  YVO^  to  CaWO^.  The 
Nd  site  symmetry  in  the  latter  is  the  group.  The  only  difference  in  the 
formal  expansion  of  the  crystal-field  potential  compared  to  YVO^  is  that 
the  terms  having  | q I > 0 are,  in  general,  complex  [23].  Yet  the  spectrum 
of  NdiCaWO^  [24]  does  not  show  a large  concentration  of  the  available 
oscillator  strength  into  one  transition  as  is  observed  in  NdrYVO^.  Since 
Table  4 is  applicable  to  CaWO  except  for  the  rep  labels  (see  Reference  17), 

we  conclude  that  something  akin  to  the  A (k  odd)  being  competitive  with 

7 . iZ 

A ^ is  the  cause  for  this  difference  between  the  two  hosts.  In  other  words, 


the  odd -par  ity  portion  of  the  crystal  field  is  concentrated  in  the  high -order  terms 

in  YVO,  while  in  CaWO.,  it  is  either  in  the  low-order  terms  or  distributed 
4 4 

over  all  the  terms.  This  difference  appears  to  be  reflected  in  the  even- 

6 2 

parity  terms.  The  ratio  B Q/B  Q for  Nd  in  CaWC>4  is  -0.031  [220  while 

in  YVO  it  is  8.6  Q (Note  that  B - ( r^)A^  , where  ( r^)  are  the  usual 

4 q q 

radial  integrals.  ) 

It  can  be  shown  that  the  odd-parity  A are  quite  sensitive  to  ion 

placements  and  to  slight  deviations  from  the  normal  site  symmetry.  The 

difference  between  YV04  and  other  hosts  may  be  a result  of  this  sensitivity. 

A case  that  illustrates  the  dependence  of  line  strengths  on  the  ion  place- 

8 6 3 + 

ments  is  the  behavior  of  the  S'*  I transitions  of  Gd  in  BaF  [25].  These 

Lr 


66 


transitions  are  magnetic  dipole  forbidden  but  are  observed  in  CaF  and 

SrF  as  electric  dipole  transitions  via  intermediate  coupling  [26,  27]  and 
Z 5 7 

the  A and  A parameters.  However,  they  are  absent  in  BaF  at  low 
3+  ^ ^ 

Gd  concentrations,  say^  0.  1 atomic  %.  As  the  concentration  is  increased, 

these  transitions  suddenly  turn  on  at  around  0.  2 atomic  % and  grow  very 

rapidly.  It  was  determined  that  this  effect  was  due  to  the  minute  change  in 

3 1 

the  lattice  parameter  introduced  by  substituting  the  smaller  Gd  ion  (1.02  A) 
2 t 

for  the  Ba  ion  (1.351).  In  simple  terms,  this  small  change  in  lattice 

dimension  produced  large  changes  in  the  above  odd  parity  terms  while  the 

crystal  field  splittings  changed  by  <1  cm 

There  is  the  question  of  the  missing  transitions  in  Figure  28  that 

are  allowed  by  the  selection  rules.  This  is  most  evident  in  transitions  with 

4 

the  c and  d levels  of  the  I . manifold  and  with  the  d and  e levels  of  the 
4 ^ 

I nj2  manifold.  Regarding  the  former  and  referring  to  the  low  tempera- 
ture a spectrum  in  Figure  25, we  see  that  one  of  the  transitions  a -»  d or 

b -♦  d is  missing.  Since  d is  a T as  are  levels  a and  b,  then  from  Table  4 

7 * 

assuming  A ^ is  dominant  we  see  that  unless  d has  some  1 = 9/2 
content,  it  will  not  be  observed  in  it  polarization.  It  will  be  observed  in 
a polarization  via  its  |j^j  = 7/2  content  but  only  to  a T^  level.  Thus,  we 
are  led  to  identify  the  observed  transition  to  be  a d.  This  choice  is 
contrary  to  that  reported  in  previous  studies  [9,  10,  12],  but  is  consistent 

4 2 

with  the  absence  of  the  *g/2^  ^1/2  ^ransi^lon* 

There  is  no  ambiguity  in  the  assignment  of  the  transitions  with 

4 2 

level  I because  of  the  observed  transition  to  the  level.  The 

corresponding  line  in  the  Figure-25  a spectrum  is  the  b c transition. 

This  line,  being  anomolously  wider  than  either  of  its  neighbors,  is  suffi- 
cient to  include  a weak  a c line  in  the  high  wavelength  wing.  Regarding 
this  width,  there  have  been  two  Raman  modes  in  YVO^  reported  at  157 

and  162  cm  * of  symmetry  B (T  ) and  E (T_),  respectively  [28],  Both  of 

lei  e 5 


67 


these  modes  will  couple  the  1^  and  1^  states  [27]  (i.  e.  , levels  c and  a) 

which  suggests  that  level  c is  broadened  by  a strong  coupling  with  the  lattice. 

4 4 

The  distribution  of  oscillator  strength  in  the  *11/2  trans*" 

tions  can  be  understood  by  extending  Table  4 to  include  J = +1  1/2.  Again, 

7 z 

if  the  A ^ parameter  dominates  the  induced  dipole  moment,  then  only  those 

r?  levels  containing  a large  admixture  of  = +7/2,  +9/2  and  those  T ^ levels 

containing  J = +11/2  will  have  strong  transitions  terminating  on  them. 

Saying  it  another  way,  those  levels  having  little  or  none  of  these  J values 

4 Z 

will  have  little  or  no  coupling  with  the  F . levels, 

4 3 * 2 

Regarding  the  absence  of  the  *9/2^"^*  ^1/2  transition,  ^ ls 

reasonable  to  assign  this  to  the  Boltzmann  depopulation  of  the  level  e plus 
an  oscillator  strength  smaller  than  the  corresponding  TT  transition. 


F.  Summary 

A reasonably  unambiguous  determination  of  the  positions  of  the 

4 4 4 4 

crystal-field  levels  of  the  I9/2’  ^ll/Z9  ^3/2'  anc*  ^1/2  ^ manifolds  of 
Nd  in  YVO^  has  been  made.  The  proposed  energy  level  scheme  is  consis- 
tent with  the  observed  polarized  spectra.  The  ground  state  was  determined 
to  be  P7(  JJL  = +3/2)  with  a J composition  of  +1  /2,  ±7/2,  and  +9/2  consistent 
with  previous  studies  [12,  20].  An  analysis  of  the  implications  of  the  Judd- 
Ofelt  theory  [l  3]regarding  the  transitions  between  the  crystal-field  levels 
showed  that  (1)  lines  can  be  missing,  and  (2)  it  is  possible  for  a tt  transi- 
tion to  have  a relatively  high  oscillator  strength  in  the  spectra  of  Nd  in 
or  a similar  symmetry.  It  was  found  that  the  unusual  disparity  of  strengths 

of  the  strong  lines  relative  to  the  remaining  lines,  particularly  in  the  TT 

7 

spectra,  could  be  qualitatively  understood  if  the  contribution  of  the  A 

+0 

parameter  to  the  induced  electric  dipole  moments  is  significantly  greater 
than  the  contributions  from  the  A ^ (k  = 3,5,7)  parameters.  This  suggests 
that  it  would  be  of  value  to  compare  detailed  crystal-field  and  line-strength 
calculations  performed  for  various  host  crystals  in  order  that  the  difference 
between  YVO^  and  other  laser  hosts  can  be  more  clearly  understood. 


68 


IV.  SURVEY  OF  Nd:  YVO  . ABSORPTION 

4 

The  Cary  17  Dual  Beam  Spectrophotometer  was  used  to  measure  the 
absorption  spectrum  of  Nd:YVO^  from  0.  38  to  2.  0 p m.  The  lower  limit 
was  determined  by  the  material's  uv  absorption  edge  and  the  upper  limit  by 
the  instrument.  Several  bands  of  interest  were  probed.  There  are  at  ~ 1.6, 
0.  89,  0.  81 , 0.  75,  0.  59,  0.  53,  0.  48  and  0.  44  pm.  The  observed  lines  are 
tabulated  in  Table  8.  Copies  of  the  data  for  these  bands  obtained  with  a 1% 
Nd:YVO^  sample,  4 mm  thick,  are  included  for  both  a and  n polarized  light 
in  Figures  29-44. 

The  most  intense  absorption  line  in  the  - 0.81  pm  band  is  the 

0.  8080  pm  line  for  rr  polarized  light.  Its  absorptivity  is  ~ 8.  6 cm  The 

0.8078  pm  line  fora  polarized  light  is  also  strong  having  an  absorptivity 

of  ~ 4.  2 cm  \ Since  these  lines  are  part  of  a strong  pump  band,  it  is 

therefore  recommended  that  diodes  for  laser  excitation  of  Nd  in  YVO,  be 

4 

tuned  for  0.  8080  pm  and  have  sufficient  line  width  to  also  pump  at  0.  8078 
pm. 


The  "yellow"  absorption  band  (at  ~ 0.  59  pm)  is  the  most  intense 
absorption  band  in  the  NdrYVO^  spectrum.  In  tt  polarized  light  the  line 
at  0.  5940  pm  has  an  absorptivity  of  ~ 1 5.  3 cm  There  are  several  other 
very  intense  lines  in  this  group  for  both  a and  rr  polarized  light.  Since  dye 
lasers  in  this  spectral  region  are  available^  laser  excitation  using  these 
lines  should  be  possible. 

It  should  be  noted  that  pumping  at  the  most  intense  absorption  wave- 
lengths will  result  in  very  high  thermal  loading  to  a very  small  volume  of 
material.  This  may  result  in  pump  induced  catastrophic  or  non-catas- 
trophic  material  failure.  In  addition,  the  pumped  volume  will  be  restricted 
to  the  region  near  the  entrance  surface  and  so  any  lasing  which  occurs 
will  be  similar  to  that  produced  by  a surface  laser.  It  is  suggested  there- 
fore that  dye  laser  pumping  studies  be  conducted  for  a variety  of  wave- 
lengths in  the  nyellowM  band  so  that  the  optimum  combination  of  absorptivity. 


69 


excited  lasing  volume  and  thermal  loading  can  be  found. 


In  the  cw  laser  experiments  we  pumped  with  the  0.  5145  gm  laser 
line  from  an  argon  ion  laser.  The  nearest  absorption  line  for  this  pump 
source  is  the  0.  5143  |jm  line  fora  polarized  light.  Even  though  it  pre- 
sents a good  wavelength  match  to  the  pump  line,  this  line  is  relatively 
weak.  Its  absorptivity  is  only  - 0.  4 cm  The  absorption  at  0.  5145  pm 
for  TT  polarized  light  is  in  the  edge  of  the  0.  5118  |jm  line  and  has  an 
absorptivity  of  ^ 0.4  cm 

The  tt  and  a absorption  spectra  of  a 3%,  8.  5 mm  thick,  Nd:  YVO^ 
crystal  in  the  0.  89  |jm  band  are  included  in  this  report.  These  should 
be  compared  with  the  same  spectra  for  the  1%  Nd:YVO^  sample.  It  is 
clear  that  the  line  shapes  and  position  do  not  change  with  concentration. 

In  addition,  for  all  absorption  wavelengths  in  the  0.  7-0.  95  |jm  range,  the 
absorption  strengths  were  found  to  scale  with  the  Nd  concentration. 

As  a result  of  our  spectral  measurements  at  1.  6 urn  we  have 
shown  the  Cary  17  Spectrophotometer  to  be  partially  linearly  polarized. 

In  particular,  it  appears  to  be  partially  polarized  in  the  horizontal  plane. 
Its  optical  system  is  essentially  the  same  as  that  of  the  Cary  14  and  so 
we  suggest  that  data  taken  with  such  instruments  be  scrutinized  for  this 
effect.  To  insure  the  linear  polarization  necessary  for  separation  of  the 
a and  TT  spectra  of  the  shorter  wavelength  absorption  bands,  calcite -Gian 
polarizers  were  inserted  in  both  the  sample  and  reference  beams  of  the 
instr  ument . 


70 


Table  8 


Absorption  Lines  of  Nd:YVO  at  Room  Temperature 
Nominally  1%  Nd 


Classification 


13/2 


15/2 


a Polarization 

tt  Polarization 

X (|jm) 

a (cm'* ) 

X (pm) 

a(cm'*) 

2.  564 

2.  535 

2.  538 

2.  518 

strongest 

2.  480 

2.483 

2.455 

2.  455 

2.408 

strongest 

2.408 

1. 766 

0.  018 

1. 766 

0.  081 

1. 747 

0.  064 

1.  748 

0.  012 

0.  738 

0.  055 

1.713 

0.  035 

1. 713 

0.  166 

1. 705 

0.  035 

1. 706 

0.  129 

1.691 

0.  042 

0.  667 

0.  023 

1.675 

0.  035 

1. 638 

0.  046 

1. 6 50 

0.  11  5 

1. 627 

0.  037 

1. 627 

0.  075 

1.  598 

0.  055 

1.  598 

0.  449 

1.  583 

0.  216 

1.  583 

0.  081 

1.302 

0.  063 

1. 288 

0.  046 

0.  9138 

0.  253 

0. 9132 

0.  293 

0.  9030 

0.  127 

0.  901 

0.  144 

0.8913 

0.  753 

0.  8877 

0.  805 

0. 8868 

0.  886 

0.  8794 

4.  899 

0.  8785 

1.  500 

0.8675 

0.  293 

0. 8687 

0.  196 

0.  8577 

0.  219 

0.  8350 

0.  661 

0. 8351 

0.  288 

0.8158 

2.  645 

0.  8180 

1.  323 

0.  8078 

4.  169 

0.  8080 

8.  596 

0. 7883 

0.  270 

0.  790 

0.  230 

0. 7754 

0.  230 

0.  7745 

0.  633 

0. 7666 

0.  587 

0. 7562 

3.  726 

0.  7530 

4.  255 

0.  7505 

4.  428 

0.  7435 

1.  783 

0.  7440 

2.  3 58 

0. 6347 

0.  075 

0. 6302 

0.  029 

0. 6308 

0.  144 

0.  6260 

0.  173 

0.  6262 

0.  058 

0.  610 

0.  219 

0.  6101 

2.  3 58 

0.  6045 

1. 610 

0. 6048 

1.  541 

0.6015 

3.  996 

0.  6010 

2.  128 

0.  5982 

14.  346 

71 


Table  8.  (Continued) 


Classification 


a Polarization  tt  Polarization 


X (tim) 

a(cm-1) 

X((jm) 

a (cm-1 

0. 5981 

6.  986 

0.  5957 

14. 470 

0. 5957 

7.  744 

0. 5940 

15.  266 

0. 5938 

8.424 

0.  5890 

5.  520 

0.  5892 

10.  810 

0. 5866 

5.  923 

0.  5870 

4.  313 

0. 5832 

6.  383 

0.  5853 

3.  565 

0. 5795 

1.  265 

0.  5795 

5.  750 

0.  5770 

0.  661 

0.  5755 

0.  431 

0.  573 

0.  316 

0. 5735 

0.  259 

0.  570 

0.  259 

0.  5715 

0.  173 

0.  566 

0.  219 

0. 5680 

0.  144 

0.  563 

0.  219 

0.  5661 

0.  127 

0.  560 

0.  219 

0.  5630 

0.  115 

0.  5600 

0.  11  5 

0.  5555 

0.  086 

0.  5525 

0.  058 

0. 5510 

0.  058 

0.  5452 

0.  086 

0.  5523 

0.  173 

0.  5437 

0.  104 

0. 5433 

0.  863 

0.  5408 

0.  288 

0. 5408 

2.  444 

0.  5382 

0.  977 

0.  5382 

0.  058 

0.  5362 

1.  484 

0.  5358 

0.  058 

0.  5380 

0.  391 

0. 5333 

0.  661 

0. 5362 

0.  903 

0. 5301 

1.  524 

0. 5325 

3.  939 

0.  5285 

0.  288 

0.  5285 

1.  926 

0. 5245 

0.  604 

0.  5250 

0.  010 

0. 5222 

1.  26  5 

0.  5223 

1.  236 

0. 5200 

2.  128 

0. 5202 

0.  288 

0. 5170 

1.  254 

0. 5178 

0.  201 

0.  5118 

1. 495 

0.  516 

0.  173 

0. 5095 

0.  920 

0. 5143 

0.403 

0. 5070 

0.  345 

0.  511 

0.  288 

0. 5050 

0.  086 

0. 5097 

0.  431 

0. 5070 

0.  288 

0.4912 

0.  029* 

0.4970 

0.  029* 

0.  4855 

0.  086 

0.4912 

0.  069 

0.4838 

0.  219 

0.  4885 

0.  012 

0.4820 

0.  230 

0.4850 

0.  259 

0.4790 

0.  184 

0.4819 

0.  805 

0.4760 

0.  288 

0.4790 

0.  144 

72 


Table  8.  (Continued) 


Classification 


g Polarization  tt  Polarization 


X (um) 

a(cm'*) 

MUm) 

a (cm  ~ 

0.4735 

0.  115 

0.4759 

2.  156 

0.4710 

0.  132 

0.4713 

0.  633 

0.468 

0.  173 

0.4670 

0.  328 

0.  465 

0.  219 

0.4625 

0.  230 

0.  4632 

0.  276 

0.4420 

0.  098 

0.4372 

0.  173 

0.4371 

1. 064 

0.4360 

0.  086 

0.4340 

0.  058 

0.  4340 

0.  943 

0.4250 

0.  069 

0.4235 

0.  058 

0.  4235 

0.  1 55 

* The  absorptivity  for  all 
for  the  broad  color  center 


o 

lines  at  wavelengths  <5000A  has  been  corrected 
band  absorption  evident  in  Figures  43  and  44. 


73 


?.483 — i 


Figure  29.  2.  5 pm  Band  of  Nd:YVO^  Absorption  Spectra  at  Room 

Temperature.  Taken  with  Beckman  DK-2A  Spectro- 
photometer. 1%  Nd.  4 mm  thick. 


74 


OPTICAL  DENSITY 


Figure  30.  1.6  |_im  Band  of  NdiYVO^  Absorption  Spectra  at  Room 

Temperature.  Partially  polarized  light  propagating  along 
the  a -axis.  Mostly  IT  spectrum.  1%  Nd.  4 mm  thick. 


75 


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Figure  32.  0.  89  pm  Band  of  Nd:YVO^  Absorption  Spectra  at  Room 

Temperature,  o spectrum.  1%  Nd.  4 mm  thick. 


77 


OPTICAL  DENSITY 


Figure  33.  0.  89  |Jirn  Band  of  NdrYVO^  Absorption  Spectra  at  Room 

Temperature,  aspectrum.  3%  Nd.  8.  5 mm  thick. 


78 


OPTICAL  DENSITY 


Figure  34. 


0.  89  Mm  Band  of  Nd:YVO^  Absorption  Spectra  at  Room 
Temperature,  n spectrum.  1%  Nd.  4 mm  thick. 


79 


OPTICAL  DENSITY 


Figure  35. 


0.  89  nm  Band  of  NdrYVO^  Absorption  Spectra  at  Room 
Temperature.  TT  spectrum.  3%  Nd.  8.  5 mm  thick. 


80 


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81 


Figure  36.  0.  75  and  0.  81  |jm  Bands  of  Nd:YVO^  Absorption  Spectra  at  Room  Temperature 

a spectrum.  1%  Nd*  4 mm  thick. 


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Figure  40.  Yellow  Band  of  NdrYVO^  Absorption  Spectra 
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1%  Nd.  4 mm  thick. 


85 


OPTICAL  DENSITY 


Figure  41.  0.  53  pm  Band  of  NdrYVO^  Absorption  Spectra  at  Room 

Temperature,  a spectrum.  1%  Nd.  4 mm  thick. 


86 


OPTICAL  DENSITY 


1.0 


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WAVELENGTH  (Mm) 


Figure  42.  0.  53  pm  Band  of  Nd:YVO^  Absorption  Spectra  at  Room 

Temperature,  rr  spectrum.  1%  Nd.  4 mm  thick. 


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rr  spectrum.  1%  Nd.  4 mm  thick. 


V.  LASER  PERFORMANCE  TESTING 


A.  Laser  Testing 

During  the  second  half  of  this  project,  no  Nd  doped  YVO^  laser  rods 
suitable  for  testing  were  delivered  by  the  subcontractor.  Those  rods  that 
were  delivered  were  either  too  short  to  satisfy  the  requirements  of  this 
program  or  too  lossy  for  meaningful  laser  testing  due  to  the  presence  of 
particulate  scattering  centers.  We  were  therefore  unable  to  conduct  further 
pulse  pumped  Q switched  laser  testing  of  Nd:YVO^.  In  addition,  though 
Ho,  Er,  Tm:YVO^  laser  rods  were  delivered,  we  suspended  the  planned 
effort  to  study  lasing  from  Ho  in  YVO^  at  the  request  of  USA -ECOM. 

We  did,  however,  evaluate  the  effect  of  the  ignitron  in  the  flashlamp 
circuit  on  the  laser’s  performance.  As  shown  in  Figure  45,  the  effect  of 
the  ignitron  was  negligible.  We  also  tested  a Nd:YAG  rod  in  pulse  pumped 
Q switched  operation  in  our  laser  cavity.  This  laser  rod  was  obtained  on 
loan  from  USA-ECOM  to  provide  data  which  would  demonstrate  the  quality 
of  our  pump  cavity  and  laser  cavity  optics.  It  would  also  be  data  which 
would  permit  easy  intercomparison  of  our  system  with  that  in  use  at  ECOM. 
Figure  46,  shows  this  data  obtained  from  the  ECOM  Nd:YAG  rod  and  for 
comparison.  Figure  47  is  a reproduction  of  Figure  19  of  the  semiannual 
report  which  shows  the  Q switched  performance  of  Nd:YVO^  laser  rod,  3L. 

B.  Electrooptic  Q Switching  of  the  Nd:YVO^  Laser  Without  an 
Intracavity  Polarizer 

Pulse-pumped  Nd:YAG  lasers  are  often  Q switched  using  the  Pockels- 
cell-Glan- polarizer  combination  shown  in  Figure  48(a).  Since  the  host 
material  is  optically  isotropic,  both  the  Pockels  cell  and  the  Gian  polarizer 
must  be  placed  in  the  optical  cavity  to  prevent  premature  lasing  or  pre- 
pulsing. As  indicated  in  Figure  48(a),  when  the  voltage  applied  to  the  Pockels 
cell  produces  a one-quarter  wave,  X/4,  phase  retardation  at  the  laser  wave- 
length, the  light  reflected  from  the  100-percent  R -cavity  mirror  enters  the 


90 


0 10  20  30 

Ellgl  JOULES 


Figure  45.  Nd:YAG  laser  output  vs.  input  energy  data  with  and 

without  the  ignitron  in  the  discharge  circuit.  Current 
pulse  FWHM  is  125  ^ls  with  a krypton-filled  lamp, 

1 200  Tor r. 


91 


INPUT  ENERGY,  JOULES 

Figure  46.  Output  versus  input  energies  for  the  3 x 30  mm  Nd:YAG 
(ECOM-YAG)  using  the  Xe  flashlamp  (450  T)  and  the 
125  psec  (FWHM)  pump  pulse  duration.  Output  R =45%. 


92 


Figure  47.  Q-switched  laser  output  vs.  input  energy  from 

Nd:YVO^  (rod  3L)  using  a Pockels  cell  Q-switch 
with  no  intracavity  polarizer.  The  output  reflector 
was  3%R  at  1.06  ^im.  x Pockels  cell  Q-switched. 

O Long  pulse  lasing  with  Pockels  cell  in  cavity. 

□ Long  pulse  lasing,  empty  cavity. 


93 


100%  R 
MIRROR 


POCKELS 
CELL 


(a) 


-e® 


X/4 
VOLTAGE 
ON 


OUTPUT 

MIRROR 


Laser  rod  can  not 
amplify  light  _L  to  the 
sketch 


Laser  rod  is 
birefringent  and  does 
not  have  parallel  faces 


Figure  48.  Electrooptically  Q-switch  configurations,  (a)  A Pockels -cell- 
Glan- polarizer  combination  in  a Nd: YAG  laser  cavity,  (b)  A 
Pockels  cell  only  in  a cavity  which  has  a strong  polarization- 
dependent  gain,  (c)  A Pockels  cell  in  a cavity  where  the  laser 
rod  is  slightly  wedged  and  strongly  birefringent. 


94 


Gian  polarizer  polarized  so  that  it  is  not  transmitted.  The  combination  of 
intracavity  Pockels  cell  and  Gian  polarizer  thus  spoils  the  cavity  Q by 
isolating  the  100-percent  R mirror  from  the  optical  resonator.  When  the 
voltage  applied  to  the  Pockels  cell  is  reduced  to  zero,  there  is  no  phase 
retardation,  the  cavity  Q is  restored,  and  an  intense  Q-switched  pulse  of 
laser  light  is^produced. 

A significant  simplification  of  the  Q-switched  laser  could  be  achieved 
if  the  optical  resonator  did  not  require  an  intracavity  polarizer  for  prepulse 
free  operation.  This  was  attempted  by  McClung  and  Hellwarth  C 2 9J  for  a 
ruby  laser  and  by  Weber  et  al.  [3 0 3 for  a NdtYAlO^  laser.  In  both  of  these 
cases,  the  authors  attempted  to  use  the  anisotropic  properties  of  the  laser 
gain  in  a crystalline  host  to  prevent  premature  oscillation  in  the  laser  cavity. 

Consider  a laser  cavity  where  the  active  medium  has  gain  for  light 
polarized  in  one  direction  only.  After  two  complete  round  trips  through  this 
cavity  with  no  intracavity  polarizer  and  X/4  voltage  applied  to  the  Pockels 
cell  (see  Figure  48(a)  ),  a condition  for  oscillation  can  be  reached.  If  this 
condition 

(Rj)2  exp  (2  Ph£)  = 1 


is  met,  there  will  be  prepulsing.  Here  is  the  output  mirror  reflectivity, 

V 

B is  the  net  laser  gain  (R  is  assumed  to  be  zero  for  light  polarized  normal 
H H 

to  the  figure  in  Figure  48(b)  ),  and  H is  the  length  of  pumped  medium.  At 
threshold  for  lasing  with  no  voltage  applied  to  the  Pockels  cell,  the  oscilla- 
tion condition  is 


Rj  exp  (2  3Th^  ) = 1. 

Thus  3 = 2 3 and  so  no  holdoff  is  possible  at  pump  levels  which  produce 

H Th 

a gain  equal  to  twice  that  at  threshold.  This  is  in  agreement  with  the  results 
in  [29]  and  [30],  R ecently,  however,  prepulse-free  electrooptic  Q switching 
of  Nd:YVO^  with  no  intracavity  polarizer  was  reported  at  pump  levels  as 


95 


high  as  eight  times  threshold  [7  ] (see  Figure  47).  Since  the  anisotropic 
gain  of  the  laser  crystal  cannot  account  for  such  excellent  performance,  the 
explanation  must  lie  elsewhere. 

The  NdrYVO^  laser  rod  studied  in  [ 7 ] was  inadvertently  polished  so 

-3 

that  its  flat  end  faces  were  wedged  with  respect  to  each  other  by  ~6  x 1 0 

rad.  This,  coupled  with  the  very  strong  birefringence  of  the  YVO^  host 

3 

(n  = 1. 958  and  n = 2.  168  at  1. 06  ^lm  ),  permitted  the  laser  rod  to  act  as 
o e 

its  own  intracavity  polarizer.  To  understand  the  importance  of  the  wedge 
between  the  rod  faces  consider  that  if  the  flat,  0.  25-percent  R faces  had 
been  parallel,  laser  action  would  have  occurred  between  the  rod  faces  at 
pump  levels  ~3.  5 times  that  required  for  lasing  in  the  main  optical  resonator 
(100%  and  3%  R mirrors).  Since  no  oscillations  at  all  were  reported  with 
the  optical-cavity  mirrors  misaligned,  the  wedge  between  the  rod  faces  is 
sufficient  to  prevent  unwanted  lasing,  and  therefore  is  a critical  factor  in 
determining  the  properties  of  the  Nd:YVO^  laser. 

Suppose,  for  simplicity,  that  the  face  of  the  rod  nearest  the  100- 

percent  R mirror  was  normal  to  the  rod  axis  and  that  the  other  face  was 

.3 

misaligned  by  the  wedge  angle  (6  x 10  rad)  (see  Figure  48(c)  ).  Since  the 
cavity  mirrors  were  aligned  for  best  long-pulse  lasing,  they  were  oriented 
so  that  light  polarized  parallel  to  the  direction  having  maximum  gain  propa- 
gated parallel  to  the  rod  axis.  In  [ 7 ] the  rod  was  nominally  cut  with  its 
axis  parallel  to  the  crystalline  a axis  and,  since  maximum  gain  in  Nd:YVO^ 
occurs  for  light  polarized  parallel  to  the  optic  axis,  light  which  propagated 
as  an  extraordinary  ray  in  the  laser  rod  was  that  which  could  oscillate. 

When  the  Pockels  cell  voltage  was  on,  light  reflected  from  the  100- 
percent  mirror  entered  the  rod  as  an  ordinary  ray.  As  it  left  the  Nd:YVO^ 
rod  it  was  not  refracted  far  enough  to  be  normal  to  the  output  mirror,  and 
so  no  premature  oscillations  were  possible.  For  the  wedge  angle  of 

6x10  rad  of  the  NdrYVO.  laser  rod  in  [7  J the  extraordinary  ray  would 

4 


96 


have  been  refracted  by  14x10  rad  and  the  ordinary  ray  by  11.8x10 

-3 

rad.  The  resulting  2.  2 x 10  rad  (0.  126°)  misalignment  would  have  been 
sufficient  to  prevent  prepulsing,  and  thus  explains  the  excellent  results 
reported. 

The  observation  that  a suitably  birefringent  laser  crystal  can  be 
prepared  so  that  is  can  act  as  its  own  intracavity  polarizer  for  electrooptic 
Q switching  can  lead  to  great  simplification  in  Q-switched  laser  systems. 
This  was  demonstrated  in  the  present  correspondence  for  NdrYVO^  and  can 
be  adapted  to  the  design  of  other  birefringent  laser  crystals. 


97 


VI.  CONCLUSIONS  AND  RECOMMENDATIONS 


FOR  FUTURE  EFFORTS 

Using  a laser  rod  designed  according  to  the  results  of  our  spectro- 
scopic studies  we  have  demonstrated  excellent  pulse-pumped  Q-switched 
laser  performance  from  Nd:YVO^.  Due  to  the  inherent  birefringence  of  the 
host  material,  a wedged  laser  rod  made  possible  pre-pulse  free  Q switching 
with  no  intracavity  polarizer.  This  simplifies  the  design  of  laser  systems 
using  Nd:YVO  and  can  significantly  reduce  their  cost. 

3 + 

Because  of  the  high  cross  section  for  stimulated  emission  of  Nd 
in  YVO^,  we  foresee  major  uses  of  this  material  in  pulse  pumped  and  CW 
1.  06  fim  laser  systems  where  the  available  pump  power  is  limited.  In 
addition,  where  simplicity  is  essential,  Q-switched  lasers  at  1.06  \j. m can 

benefit  from  the  use  of  Nd:YVC>  laser  rods. 

4 

The  major  problems  to  be  solved  in  the  use  of  NdrYVO^  in  laser 
systems  is  reliable  crystal  growth  and  fabrication  techniques.  Inclusions 
lying  along  cleavage  planes  cause  cracking  during  cool-down  and  sometimes 
during  rod  fabrication.  These  inclusions  also  cause  scattering  and  in  this 
project  resulted  in  Ho,  Er,  Tm:YVO^  crystals  that  were  too  lossy  to  lase. 

We  recommend  future  efforts  to  1)  develop  crystal  growth  and  fabri- 
cation techniques,  2)  study  CW  lasing  of  NdrYVO^  and  3)  study  Ho,  Er,  TmrYVO^ 
lasing  near  2 Hm. 


98 


REFERENCES 


1.  J.  R.  O'Connor,  Appl.  Phys,  Lett,  9,  407  (1966). 

2.  R.  J.  Pressley,  "Improving  Solid-State  Lasers,"  RCA  Laboratories,  1969. 

3.  H.  G.  McKnight  and  L.  R Rothrock,  "Research  and  Development  Work 
for  the  Growth  of  Single  Crystal  Yttrium  Orthovanadate,"  Technical 
Report  ECOM0022F,  U.  S.  Army  ECOM  Contract  DA  A B07  -72-C-0022, 
April  1973. 

4.  H.  M.  Dess  and  S.  R.  Bolin,  paper  presented  at  Electronics  Materials 
Conference,  Boston,  Mass.,  Aug.  1966. 

5.  H.  M.  Dess  and  S.  R.  Bolin,  Trans.  Metal.  Soc.  A I ME  239,  359  (1967). 


6.  L.G.  DeShazer,  M.  Bass,  U.  Ranon,  J.K.  Guha,  and  E.  D.  Reed, 

VIII  Intern.  Quant.  Elect.  Conf. , June  1974  (IEEE,  New  York),  pp.  708. 

7.  M.  Bass,  L.G.  DeShazer,  and  U.  Ranon,  Technical  Report  ECOM-74- 
0104-1  (October,  1974),  U.  S.  Army  ECOM,  Fort  Monmouth,  New  Jersey. 

8.  L.G.  DeShazer,  A.W.  Tucker,  M.  Birnbaum,  and  C.  L.  Fincher,  1975 
IEEE/OSA  Conference  on  Laser  Engineering  and  Applications,  Digest  of 
Technical  Papers  (IEEE,  New  York,  1975),  Post  Deadline  Paper  No.  4.  10. 

9.  Kh.  S.  Bagdasarov,  G.A.  Bogomolova,  A.  A.  Kaminskii,  and  V.  I.  Popov, 
Dokl.  Akad.  Navk  SSSR  180,  1347  (1968)  [Sov.  Phys.  Dokl.  J_3,  516 
(1968)]. 

10.  A.  A.  Kaminskii,  G.A.  Bogmolova,  and  L.  Li,  Izvestiya  Akad.  Nauk. 

SSSR,  Neorganicheskie  Materialy  5,  673  (1969). 

11.  R.J.  Pressley,  P.  V.  Goedertier,  and  H.  Weakliem,  rMBT  70  Laser 
Materials  Research  and  Exploratory  Development,11  RCA  Lab,  Princeton, 
New  Jersey,  Report  (October  1969). 

12.  N.  Karayianis,  C.A.  Morrison,  and  D.  E.  Wortman,  Harry  Diamond 
Laboratories,  Washington,  D.  C.  (unpublished). 

13.  B.  R . Judd,  Phys.  Rev.  1 27,  750  (1962); 

G.S.  Ofelt,  J.  Chem.  Phys.  37,  51  1 (1962). 


99 


14.  L.  R Rothrock  and  R.  E.  Wilder  (work  reported  in  References  3 and  8). 

15.  R.W.G.  Wyckoff,  Crystal  Structures,  (Inter science.  New  York,  1 963). 

16.  K.H.  Hellwege,  Ann.  Physik  4,  95  (1948). 

17.  G.  F.  Roster,  J.  O.  Dimmock,  R.G.  Wheeler,  and  H.  Statz,  Properties 
of  the  Thirty-Two  Point  Groups  (M.  I.  T.  Press,  Cambridge,  Mass., 

1963). 

18.  J .A.  Koningstein  and  J.  E.  Geusic,  Phys.  Rev.  1 36,  A711  (1964). 

19.  K.  Rajnak,  J.  Chem.  Phys.  43,  847  (1965). 

20.  U.  Ranon,  Phys.  Letters  28A,  228  (1968). 

21.  C.  Brecher,  H.  Samelson,  A.  Lempickl,  R.  Riley,  and  T.  Peters,  Phys. 
Rev.  155,  178  (1967). 


22.  N.  Karayianis  and  R.T.  Farrar,  J.  Chem.  Phys.  53,  3436  (1970). 

23.  J.  L.  Prather,  ’’Atomic  Energy  Levels  in  Crystals,”  NBS  Monograph  19 
(Superintendent  of  Documents,  Washington,  D.  C.  , 1961). 

24.  J.  G.  Gualtieri  and  T.R.  Au  Coin,  J.  Chem  Phys.  45,  4348  (1966). 

25.  R.C.  Rang  and  P.  P.  Yaney,  Bull.  Am.  Phys.  Soc.  19,  818  (1974); 

R.C.  Rang,  M.  S.  Thesis  (University  of  Dayton,  1974)  (unpublished). 

26.  R.  E.  Ziegler,  P.  P.  Yaney,  and  J.A.  Detrio,  Technical  Report  AFML- 
TR-69-230  (December  1969)  Air  Force  Materials  Laboratory,  Wright- 
Patterson  AF  Base. 

27.  J.A.  Detrio,  M.  W.  Ferralli,  P.  P.  Yaney,  D.  M.  Ware,  and  V.  L.  Dolan, 

J.  Chem.  Phys.  53_,  4372  (1970). 

28.  R.T.  Harley,  W.  Hayes,  and  S.R.P.  Smith,  Solid  State  Commun.  9,  515 
(1971). 

29.  F.J.  McClung  and  R . W.  Hellwarth,  J.  Appl.  Phys.  33,  828,  (Mar.  1962). 

30.  M.J.  Weber,  M.  Bass,  K.  Andringa,  R.R.  Monchamp  and  E.  Comperchio, 
Appl.  Phys.  Lett.  1 5,  342  (Nov.  1969). 


100 


APPENDIX  A 

IF-F.E  JOURNAL  OF  QUANTUM  ELECTRONICS.  VOL.  QE-11,  NO.  3,  MARCH  197S  97 


Analysis  of  Laser  Emission  in  Ho3+  -Doped  Materials 

JOHN  A.  CAIRO  and  LARRY  G.  DeSHAZER 


Abstract -The  oscillator  strengths,  transition  rates,  and  branching 
ratios  associated  with  known  and  potential  laser  transitions  in  trivalent 
holmium  are  discussed.  Recently  reported  laser  transitions  between 
the  5Fj  and  5lj  energy  manifolds  are  found  to  have  an  abnormally 
low  average  oscillator  strength,  and  an  alternative  explanation  of  the 
laser  observation  is  suggested. 

1.  Introduction 

INDUCED  electric  dipole  oscillator  strengths  and  transition 
rates  between  energy  levels  of  rare-earth  ions  in  crystals 
can  be  calculated  using  a theory  developed  by  Judd  [1]  and 
Ofelt  [2].  In  recent  years  the  Judd-Ofelt  (JO)  model  has 
been  used  in  the  analysis  of  rare-earth  laser  materials  [3] -[6] , 
and  its  use  led  to  the  discovery  of  the  four-level  Tm:Cr:YAl  03 
laser  at  2.35  pm  (7].  This  paper  reports  the  results  of  an 
application  of  the  JO  model  to  known  and  potential  laset 
transitions  in  trivalent  holmium. 


spectrum.  Equation  (1)  may  then  be  used  to  calculate 
oscillator  strengths  in  the  fluorescence  spectrum.  It  should 
be  noted  that  (I)  gives  the  oscillator  strength  summed  over 
the  Stark  split  components  of  the  final  energy  manifold  f 
and  averaged  over  the  components  of  the  initial  energy 
manifold  / . 

The  cross  section  for  stimulated  emission  integrated  over  all 
Stark  split  components  of  the  upper  and  lower  /-manifolds 
is  given  by  [5] 

<3> 

where  i>  = 1/X.  Using  (2)  this  reduces  to 

f we3 

J o(v)dv=—jfjj'  (4) 

J-+J  }TlC 


II.  Theoretical  Background 
According  to  the  JO  model,  the  oscillator  strength  / and 
spontaneous  emission  rate  A of  crystal  field  induced  electric 
dipole  fluorescence  in  a rare-earth  ion  are  given  by  [8] 


fjj ' 


8 n7mc 
3h\(2J  + 1) 


V +2)*1 

9 n J 


and 


• 21  n,\Wn[S.  L\J\\Ut\\Afn  [S\L,}/)\1 

f-2.4,6 


8/r’eV 


Ajr  = fjj 


(i) 


(2) 


where  X is  the  mean  wavelength  associated  with  the  transition, 
n is  the  crystal’s  index  of  refraction  at  the  mean  wavelength, 
and  2/+  1 is  the  number  of  levels  in  the  upper  /-manifold. 
In  (l)  the  <||  are  doubly  reduced  matrix  elements  of  unit 
tensor  operators  calculated  in  the  intermediate  coupling 
approximation  [ 1 ) , and  the  £2,  are  three  empirical  parameters. 
These  empirical  parameters  can  generally  be  determined  for 
each  ion-host  combination  by  a least  squares  fit  between 
calculated  and  measured  oscillator  strengths  in  the  absorption 


Manuscript  received  June  7,  1974;  revised  October  16,  1974.  This 
work  was  supported  in  part  by  the  Air  Force  Systems  Command,  Air 
Force  Avionics  Laboratory,  Wright-Patterson  Air  Force  Base,  Ohio, 
and  in  part  by  the  U.S.  Army  ECOM  under  Contract  DAAB07-74-C- 
0104. 

J.  A.  Caird  is  with  the  Department  of  Physics,  University  of  Southern 
California,  Los  Angeles,  Calif.  90007,  and  with  Hughes  Aircraft  Com 
pany,  Culver  City,  Calif.  90230. 

L.  G.  DeShazer  is  with  the  Departments  of  Electrical  Engineering, 
Physics,  and  Materials  Science,  University  of  Southern  California,  Los 
Angeles,  Calil'.  90007. 


which  shows  the  significance  of  the  oscillator  slrength  in  laser 
analysis.  Without  detailed  line  shape  information  (4)  cannot 
be  used  to  predict  peak  cross  sections,  but  it  is  evident  that 
transitions  with  larger  oscillator  strengths  will  generally  have 
larger  peak  cross  sections. 

In  the  4 fn  ground  configuration  of  rare-earth  ions,  electric 
dipole  transitions  become  allowed  only  when  the  ion  feels  a 
perturbing  field  lacking  inversion  symmetry  so  that  parity 
restrictions  are  broken.  Magnetic  dipole  (md)  transitions 
between  levels  with  | A / < 1 1 are  always  allowed,  however,  and 
can  on  occasion  be  comparable  in  strength  to  the  crystal  field 
induced  electric  dipole  (ed)  transitions  A definition  of  the  md 
oscillator  slrength  consistent  with  (2)  and  (4)  is  given  by  [9] 

h 

fn • (mtl)^-T  — 

6X(2/  + 1 )mc 

• n |<4/n  [5,  L\J\\L  + 2511 4 /"  [S’,  /.')  /> I5  (5) 

where  the  matrix  elements  of  L + 25  can  be  evaluated  using 
standard  formulas  given  elsewhere  [10] . 

A computer  program  was  developed  capable  of  calculating 
the  unit  tensor  operator  matrix  elements  in  (1)  between  all 
/-manifolds  in  all  rare-earth  ions  using  previously  published 
intermediate  coupling  wave  functions  [6],  The  program  was 
then  used  to  calculate  ed  and  md  oscillator  strengths,  transi- 
tion rates,  and  radiative  branching  ratios  for  a large  number  of 
ton-host  eombmalions  for  which  intensity  parameters  £2,  had 
been  published.  The  branching  ratio  for  a transition  / -►/is 
simply  given  by 


Pi 


i 


X)  ^ (i —»/') 


(6) 


Copyrighl  1975,  by  th*  institute  of  Electrical  and  tlectionics  Engineers,  Inc. 
PRINTED  IN  THE  U.S.A.  Annib  No.  503QI-001 


98 


IEEE  JOURNAL  OF  QUANTUM  ELECTRONICS,  MARCH  197S 


where  the  sum  in  the  denominator  is  over  all  states  of  lower 
energy.  In  these  calculations  emphasis  was  placed  on  transi- 
tions for  which  laser  action  and/or  fluorescence  has  been 
reported,  and  those  for  which  the  radiative  transition  rates 
were  large  enough  to  exceed  multiphonon  emission  rates.  It 
was  found  that  the  vast  majority  of  laser  lines  had  oscillator 
strengths  greater  than  I0~6.  In  a few  notable  exceptions 
although  the  oscillator  strengths  were  somewhat  lower  than 
10  6,  the  branching  ratio  associated  with  the  laser  transition 
was  particularly  high,  and  the  upper  level  lifetime  was  long, 
allowing  for  the  buildup  of  a large  inversion  density.  The 
only  other  exceptions  were  found  in  cases  where  a trivalent 
rare-earth  ion  was  placed  on  a divalent  ion  site  in  the  laser 
material. 

III.  Application  to  Holmium 

Laser  emission  from  Ho3*  ions  has  been  observed  in  many 
hosts  on  transitions  between  the  5I7  and  5I8  energy  mani- 
folds at  wavelengths  near  2 jrm.  Laser  action  in  the  green 
near  0.55  fjm  has  also  been  reported  on  [5S2,  5F4]  -*SI8 
transitions  in  CaF7  [II]  and  BaY7F8  [12].  Recently 
stimulated  emission  in  Ho:BaY7F8  near  2.4  jxm  has  been 
attributed  to  transitions  within  the  SF5  “*SI5  group  [13]. 
Fluorescence  originating  in  the  5I6  state  has  also  been  ob- 
served in  a number  of  crystals  [9] , [13] , [14] , but  emission 
from  other  levels  is  often  quenched  by  nonradiative  processes. 

The  intensity  parameters  in  the  JO  model  for  Ho:YA103 
were  determined  by  Weber  et  al  [9]  to  be  1.82,  2.38,  and 
L53  (X  \0~7°  cm7)  for  H4,  and  f26,  respectively.  The 
electric  dipole  oscillator  strengths  and  transition  rates  for 
fluorescence  from  low  lying  energy  levels  of  Ho*3  in  YA103 
can  be  easily  derived  from  data  given  in  [9]  along  with  the 
indices  of  refraction  of  YA103  given  in  [15].  These  are 
tabulated  for  transitions  from  the  5I7,  SI6,  5FS,  and  [sS7, 
5F4]  states  in  Table  I.  Calculation  of  the  md  contributions 
in  Table  I required  the  use  of  intermediate  coupling  wave 
functions  for  Ho3*  which  were  obtained  from  the  authors  of 
[9] . The  branching  ratios  are  in  close  agreement  with  those 
reported  in  [9],  with  the  exception  of  the  5FS  “>SI4  transi- 
tion for  which  the  ratio  is  found  to  be  much  smaller  than 
previously  reported. 

Examination  of  Table  I shows  that  the  laser  transitions 
Sl7  “>5I«  and  [5S7,  5F4]-*sI8  have  oscillator  strengths 
greater  than  I0-6,  consistent  with  most  other  rare-earth  lasers 
[6] . It  is  interesting  to  note  that  5F4  -»SI8  transitions  may 
be  more  important  than  5S7  -*5I8  transitions  for  green  laser 
emission,  and  therefore  the  relative  positions  of  the  sS7  and 
*F4  energy  levels  may  have  a large  effect  on  laser  performance. 
The  5S7-*5I7  transition  at  0.76  Jim  also  appears  to  have 
sufficient  strength  to  support  laser  oscillation,  but  the  SI7 
lifetime  is  longer  than  the  5S7 , so  that  quenching  of  the  5I7 
level  may  be  required.  Conditions  also  appear  to  be  favorable 
for  laser  emission  on  both  the  5I6  5I7  line  at  2.9  jxm  and  the 

sl6  *>SI8  line  at  1.2  Jim,  particularly  since  the  fluorescence 
lifetime  of  the  5I6  level  is  reasonably  long.  At  least  one 
attempt  to  achieve  laser  action  on  the  516  ->SI7  transition, 


TABLE  I 


Oscillator  Strengths,  Transition  Rates,  and  Branching  Ratios 
for  Ho  YAJO3 


U»tl 

L 

Uv.1 

A««raga 

Rm-lp 

W.  <1 

Cac  Halo  t St 

rangtM»10S 

_ -i 

2«4.a*tv« 
ftrar  tJurtj 
Ratio 

altctnc 

dipota 

magnate 

dipola 

• U«  if  il 
<*»)  • 

maj -«t>c 
i v-.I* 

\ 

\ 

11)0 

It? 

O.tt 

tl) 

47 

I.S2I 

\ 

’*7 

1)00 

0.41 

0.  74 

IO 

22 

.14 

\ 

1)40 

>.)4 

- 

210 

. 14 

\ 

1)00 

. oct 

. 001 

. 1 1 

. M 

t . ooot 

\ 

4)10 

.It 

.02 

12 

1.0 

.0012 

\ 

1)1» 

1.  )t 

.01 

ItO 

1.  ) 

.0»1 

\ 

10410 

a. it 

- 

770 

- 

.IB 

\ 

1)4)0 

).  4t 

1270 

~ 

.7# 

\ 

>740 

0.04 

- 

0.  t 

- 

. C002 

\ 

M10 

1.00 

- 

41 

- 

.0:4 

\ 

tow 

».)0 

- 

42 

- 

. 01) 

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wvo 

1.12 

240 

- 

. 0)4 

\ 

mw 

).)• 

14)0 

- 

. It 

\ 

It  1 40 

2.42 

- 

11)0 

- 

■ S4  1 

\ 

low 

0.41 

0.  1) 

9.4 

4.1 

. 002 

\ 

))t0 

0.)) 

. 001 

1) 

.07 

.CO) 

\ 

7440 

1.7) 

. oo) 

240 

.41 

. 0)1 

\ 

10000 

I.  W 

- 

4)0 

- 

.04  4 

\ 

moo 

1.41 

- 

710 

.C)l 

\ 

10)40 

7.01 

— 

4140 

— 

.10 

however,  was  unsuccessful  [13]  even  though  the  *I7  lifetime 
was  significantly  shortened  by  addition  of  Pr3*  and  Eu3*  ions. 

The  oscillator  strength  of  the  5FS  -*SI5  emission  is  seen  to 
be  very  small  in  comparison  to  other  rare-earth  lasers,  and  to 
the  other  holmium  lasers  in  particular.  The  transition  does 
not  have  mitigating  advantages  either.  The  upper  level  life- 
time is  not  long,  the  lower  level  lifetime  is  long  (predicted), 
and  the  radiative  branching  ratio  is  very  small.  It  would  seem 
that  stimulated  emission  from  the  5F5  level  and  terminating 
on  the  5I6,  5I7,  and  5I8  levels  should  have  been  observed 
first.  One  might  ask  if  the  intensity  parameters  for  BaY7F8 
could  be  much  larger  than  in  YAJ03.  The  predicted  radia- 
tive lifetimes  for  the  SI6  and  5I7  levels  in  YA103  are  3 and  6 
ms,  respectively,  while  the  measured  lifetimes  in  BaY7F8  are 
5 and  16  ms,  respectively  [13],  indicating  that  the  intensity 
parameters  for  BaY2F8  must  in  fact  be  smaller  than  for 
YA103.  In  addition,  examination  of  the  unit  tensor  operator 
matrix  elements  involved  [9]  shows  that  changing  the  rela- 
tive magnitudes  of  the  three  intensity  parameters  could  not 
change  the  branching  ratio  appreciably.  It  could  be  that  the 
stimulated  emission  cross  section  for  this  transition  is  sharply 
peaked,  while  the  integral  (4)  remains  small.  However,  laser 
oscillation  was  reported  on  three  different  lines  2.362  /im, 
2.375  jim,  and  2.377  jim. 

Our  own  work  on  the  Tm:YAJ03  laser  at  2.3  jxm  [16] 
leads  us  to  suggest  that  the  emission  seen  by  Johnson  and 
Guggenheim  may  have  been  due  to  impurity  thulium  ions  in 
their  laser  rod.  It  should  be  noted  at  the  outset,  however,  that 
the  authors  of  [13]  indicate  that  the  Ho:BaY7F8  laser 


CAtRD  AND  DE  SHAZER  ANALYSIS  OK  LASER  EMISSION 


99 


26  _ 
24  - 


Fig.  1.  Energy  levels  of  Ho3*,  Tm3*,  and  Er3*  indicating  transitions 
in  the  2.3-2.4-*un  region. 

material  was  of  very  high  purity  and  that  no  fluorescence 
typical  of  thulium  was  observed  [17]. 

Fig.  I compares  the  energy  levels  and  laser  transitions  of 
Ho34  and  Tm3+  in  question.  Er3*  is  included  for  later  discus- 
sion. The  laser  wavelengths  which  have  been  observed  in 
Tm.YA103  on  3F4  ->,3H5  transitions  are  2.348  /xm,  2.349  Atm 
[18],  and  2.272  /im  [19],  while  the  range  of  possible  wave- 
lengths in  this  group  extends  from  2.13  to  2.61  /xm  based  on 
the  energy  levels  given  in  [18].  Also  indicated  in  Fig.  1 are 
possible  mechanisms  for  nonradiative  transfer  from  Ho3*  to 
Tm3*.  This  excitation  scheme  is  consistent  with  the  observa- 
tions of  Johnson  and  Guggenheim  since  they  indicate  laser 
oscillation  is  initiated  by  pumping  the  5F5  level  of  Ho3*. 
Nonradiative  transfer  from  Ho3*  SI4  to  Tm3*  3F4  is  also  pos 
sible,  but  direct  excitation  of  the  5I4  level  of  Ho3*  is  ineffec- 
tive because  the  absorption  of  the  5I4  level  is  extremely  weak. 
Cessation  of  oscillation  early  in  the  pump  pulse  attributed  to 
terminal  state  population  buildup  was  observed  [13]  and  may 
be  consistent  with  the  Tm3*  3H5  level  lifetime  in  BaY2F8 
(though  this  is  not  observed  in  YA103).  The  normal  thulium 
aH4 -►3H6  fluorescence  at  1.9  /mi  would  be  quenched  by 
nonradiative  energy  transfer  from  the  Tm3*  3H4  to  the 
Ho3*  5I7  level,  and  would  therefore  be  difficult  to  observe. 
Fluorescence  from  the  3F4  -+3H6  transition  at  0.8  /im  might 
be  expected,  however,  if  thulium  were  responsible  for  the 
laser  action.  One  might  ask  why  the  Tm3*  transition  is  not 
observed  to  lase  in  a large  number  of  crystals  in  which  Ho3*, 
Er3*,  and  Tm3*  are  doped  together  to  sensitize  the  2-/xm 
transition  in  holmium.  Reference  to  Fig.  1 shows  that  the 
presence  of  erbium  in  these  cases  would  quench  fluorescence 
from  the  3F4  level  of  Tm3*  by  nonradiative  energy  transfer 
to  the  4I9^  level  of  Er3*. 


IV.  Summary  and  Conclusion 

An  analysis  of  holmium  laser  transitions  has  been  performed 
based  primarily  on  the  Judd-Ofclt  theory  of  crystal  field 
induced  electric  dipole  oscillator  strengths.  The  JO  model 
appears  to  be  useful  in  describing  some  of  the  actual  and 
potential  laser  properties  of  Ho3*,  except  in  the  case  of  the 
reported  5FS  ~>5IS  transitions.  The  observation  of  laser 
emission  from  holmium  on  these  lines  would  not  indicate  a 
b;cakdown  of  the  JO  model,  but  would  show  that  the 
applicability  of  the  JO  model  to  laser  analysis  is  limited  in  its 
present  form.  If,  however,  the  observed  emission  could  be 
attributed  to  thulium  impurities  in  the  crystal,  the  JO  model 
will  have  been  a useful  tool  in  the  identification  and  prediction 
of  the  laser  transitions. 


References 

[1]  B.  R.  Judd,  “Optical  absorption  intensities  of  rare-earth  ions,” 
Phys  Rev.tv ol.  127,pp.  750-761,1962. 

[21  G.  S.  Ofelt,  “Intensities  of  crystal  spectra  of  rare-earth  ions,” 
J Chem.  Phys.,  vol.  37,  pp.  51 1-520,  1962. 

[3]  W.  F.  Krupke,  “Radiative  transition  probabilities  within  the  4/3 
ground  configuration  of  Nd:YAG,”  IEEE  J.  Quantum  Electron. , 
vol  QE-7,  pp  153-159,  Apr.  1971 

[4]  , “Assessment  of  a promethium  YAG  laser,”  IEEE  J.  Quan* 

turn  Electron.  (Corresp.),  vol.  QE-8,  pp.  725-726,  Aug.  1972. 

[5]  , “Induced-emission  cross  sections  in  neodymium  laser 

glasses,”  IEEE  J.  Quantum  Electron.,  vol.  QE-10,  pp.  450-457, 
Apr.  1974 

[6]  J.  A.  Caird,  “Theoretical  analysis  of  rare-earth  laser  materials,” 
in  the  Optical  Society  of  America  1974  Spring  Meeting  Program 
(Washington,  D.C.),  Apr.  21-25,  p.  535. 

[7]  L.  M Hobrock  et  al.,  “Four-level  operation  of  Tm:  Cr:  YAIO3 
laser  at  2.35  jim,”  in  Dig.  Tech.  Papers,  VIII  Int.  Quantum 
Electronics  Conf  (Montreal,  P.  Q.,  Canada),  May  8-U  , 1972. 

[8]  W.  F.  Krupke,  “Optical  absorption  and  fluorescence  intensities 
in  several  rare-earth  doped  Y203  and  LaF3  single  crystals,” 
Phys.  Rev.,  vol.  145,  pp.  325-337,  May  1966. 

[9]  M.  J.  Weber,  B.  H Matsinger,  V.  L.  Donlan,  and  G.  T.  Surratt, 
“Optical  transition  probabilities  for  trivalent  holmium  in  LaF3 
and  YA103,”y.  Chem.  Phys.,  vol.  57,  pp  562-567,  July  1972. 

[10]  B.  G.  Wyboume,  Spectroscopic  Properties  of  Rare  Earths . New 
York:  Interscience,  1965. 

[11]  Y.  K.  Voronko,  A.  A.  Kaminsky,  V.  L.  Osiko,  and  A.  M. 
Prokhorov,  “Stimulated  emission  of  Ho3*  in  CaF2  at  55 12 A,” 
Sov.  Phys.- JETP  Lett. , vol.  1 , pp.  3-5,  Apr.  1965. 

[12]  L.  F.  Johnson  and  H.  J.  Guggenheim,  “lnfrared-pumped  visible 
laser,”  Appl.  Phys.  Lett,,  vol.  1 9,  pp  44-47,  July  1971. 

[13]  — , “Electronic-  and  phonon -terminated  laser  emission  from 
Ho3*  in  BaY2F$,”  IEEE  J.  Quantum  Electron.,  vol.  QE-10,  pp. 
442-449,  Apr.  1974. 

[14]  G.  H.  Dieke,  Spectra  and  Energy  Levels  of  Rare  Earth  Ions  in 
Crystals . New  York:  Interscience,  1968. 

[15]  K.  W.  Martin  and  L.  G.  DeShazer,  “Indices  of  refraction  of  the 
biaxial  crystal  YA103,”  Appl.  Opt.,  vol.  12,  pp.  941-943,  May 
1973. 

116]  J.  A.  Caird,  J.  Nella,  and  L.  G.  DeShazer,  unpublished. 

[17]  L.  F.  Johnson,  private  communication. 

[18]  L.  M.  Hobrock,  “Spectra  of  thulium  in  yttrium  orthoaluminate 
crystals  and  its  four-level  laser  operation  in  the  middle  infrared,” 
Ph.D  dissertation,  Univ.  Southern  California,  Los  Angeles,  Jan. 
1972. 

[19]  J.  Nella,  private  communication. 


APPENDIX  B 


Continuous-wave  operation  of  Nd:YV04  at  1.06  and  1.34  ^ 

A.  W.  Tucker,  M.  Birnbaum,  and  C.  L.  Fincher 

Electronics  Research  Laboratory ; The  Aerospace  Corporation.  El  Segundo,  California  9 0245 

L.  G.  DeShazer 

Center  for  Laser  Studies,  University  of  Southern  California,  Los  Angeles,  California  90007 
(Received  7 August  1975) 

Continuous-wave  plane-polarized  outputs  of  1 W at  1.06  p.  and  0,35  W at  1.34  p.  were  obtained  by  end 
pumping  small  samples  of  Nd  : YV04  with  an  argon-ion  laser.  Slope  efficiencies  and  material  losses  were 
determined.  At  1.06  and  L34  p.,  Nd:  YV04  lasers  can  substantially  outperform  Nd.YAG  lasers.  Self- Q- 
s witched  operation  of  Nd:YV04  at  both  wavelengths  was  obtained  by  resonator  misalignment 

PACS  numbers:  42.60  G 


Lasers  of  high  efficiency  and  icrw  thresholds  are  re- 
quired in  diverse  applications  such  as  communications, 
ranging,  and  metrology.  The  Nd  : YAG  laser  has  repre- 
sented the  state-of-the-art  in  most  applications  requi- 
ring low-threshold  and  efficient  lasers.  O’Connor1  had 
observed  almost  ten  years  ago  that  Nd  : YV04  possessed 
a larger  stimulated -emission  cross  section  at  1.06  M 
than  Nd  :YAG  and  obtained  iow-threshold  laser  operation 
at  90  °K.  Recently,  detailed  spectroscopic  measurements 
quantified  O’Connor's  observations  by  showing  that  the 
stimulated-emlsslon  cross  section  of  A -axis  Nd  :YV04 
at  1. 0634  p was  4. 6 times  greater  than  that  of  Nd : YAG 
at  1.0642  p.2 

The  superiority  of  Nd  : YV04  lasers  at  1.06  and  1.  34 
p over  Nd : YAG  is  demonstrated  here  by  a comparison 
of  the  laser  characteristics  of  small  spectroscopic  sam- 
ples of  Nd : YV04  with  a high -optical-quality  Nd  : YAG 
laser  rod.  The  comparisons  were  effected  by  end  pump- 
ing with  cw  and  pulsed  argon-ion  lasers  at  514.  5 nm, 
with  emphasis  on  cw  performance.  Development  of 
Nd  :YV04  lasers  Is  hindered  by  the  lack  of  large  (3x30 
mm)  laser-grade  crystals.  However,  difficulties  in 
vanadate  crystal  growth  have  been  Identified  and  large 
laser-grade  crystals  may  soon  be  available.5 

The  equations  describing  the  laser  performance  can 
be  derived  from  consideration  of  the  laser-threshold 
condition 

RJH,  exp2L{nwo  - A)  = 1 (1) 

where  R [ and  R 2 are  the  corrected  mirror  reflectivities 
(see  explanation  which  follows),  L is  the  length  of  the 
laser  sample,  nm  is  the  density  of  Nd3*  ions  in  the  upper 
state  of  the  User  transition,  o is  the  peak  stimuUted- 
emission  cross  section,  A is  the  total  losses  per  cm 
(exclusive  of  transmission  losses  by  the  mirrors)  which 
include,  for  example,  diffraction  losses,  excited -state 
absorption,  and  scattering  losses.  The  rod  ends  were 
plane  parallel  and  carefully  aligned  with  the  plane 
dielectric -coated  end  mirrors.  In  laser  operation,  the 
Fabry -Perot  condition  for  maximum  reflectivity 
R'z=  (r1*2  + R1/2)2[l  + (rR)1/2]“2  should  be  a good  approxi- 
mation with  r the  Fresnei  reflectivity  of  the  crystal  and 
R the  mirror  reflectivity. 4 

In  cw  operation  the  upper- level  population  is  related 
to  the  pump  power  according  to 


, _3£dVL 

— » 

hv>V 


(2) 


where  rtm  is  the  population  per  cm3  of  the  upper  User 
level,  i?  Is  the  quantum  efficiency,  namely,  the  fraction- 
al number  of  Nd3*  In  the  4FJ/2  level  per  absorbed  pho- 
ton, fB  is  the  fractional  popuUtion  in  the  upper  User 
sublevel  of  the  4F3/2  state,  Pm  Is  the  pump  power  absorb- 
ed by  the  laser  crystal,  r is  the  fluorescence  lifetime 
of  the  4F1/2  level,  h vp  is  the  energy  per  pump  photon, 
and  V is  the  volume  pumped.  Substitution  of  Eq.  (2)  Into 
Eq.  (1)  yields 


q/j-P.T  2L<J  = 2L A — InR'R'  (3) 

hvpV 

The  advantages  of  our  method,  namely,  the  accessibility 
of  the  quantities  in  Eq.  (3)  to  direct  measurement  have 
been  described  earlier.  8 A critical  evaluation  of  the  mea- 
surement techniques  will  be  treated  in  a subsequent 
publication. 

One  of  the  more  difficult  quantities  to  measure  in  a 
four-ievei  User  system  such  as  Nd : YV04  is  the  loss 
factor  A . This  can  be  determined  by  measurement  of 


FIG.  1.  Experimental  arrangement. 


Journal  of  Applied  Physics,  Vol.  47,  No.  1,  January  1976 


Copyright  © 1976  American  Institute  of  Physics 


232 


232 


TABLE  I.  Partial  list  of  the  parameters  of  Nd  :YV04  (1%)  and 
Nd  :YAG  (l£)  crystals  used  in  the  paper.  Entries  above  the 
broken  line  are  taken  from  Ref.  2.  The  other  values  were 
obtained  in  this  study. 


Nd  : YV04 
04  axis) 

Nd  : YAG 

y (nn>) 

1.0634 

1.  0643 

T (ms) 

92 

240 

Ay  (cm-1) 

7 

6 

a (cm'2) 

•30  x l(H* 

6.5x1 0"tJ 

L (cm) 

0.48 

1.275 

V (cm3) 

1.27x10-* 

3.86X10*5 

A (cm*1) 

0.16 

0.018 

the  laser  threshold  as  a function  of  the  reflectivity  of  the 
output  mirrors. 5 

The  experimental  arrangement  utilized  for  these  mea- 
surements is  shown  in  Fig.  1.  By  chopping  the  cw  argon- 
ion  laser  beam,  pump  pulses  of  several  millisecond  du- 
ration were  provided.  Since  this  is  long  compared  to  the 
cavity  and  crystal  response  times,  the  results  are  direct- 
ly applicable  to  cw  performance  of  the  lasers.  Chopping 
reduces  the  heat  load  in  the  crystal  and  also  prevents 
damage  to  the  dielectric  coatings  on  the  mirrors.  The 
Nd  :YAG  rod  was  anti  reflection  coated  at  1.06  ji,  while 
the  Nd  :YV04  sample  was  uncoated.  The  resonator  con- 
sisted of  two  plane -parallel  mirrors;  one  a high  (99%) 
reflector  and  the  other  a partial  reflector  of  99,  95.6, 

84,  72. 6,  67. 6,  and  53%  reflectivity.  A plot  of  the 
absorbed  power  vs  - lnFt[R't  was  accurately  linear. 

The  intercepts  of  the  ordinate  axis  at  PM  = 0 provided  the 
loss  coefficients,  A = 0. 16  cm"1  for  Nd  : YV04  (1%  con- 
centration) and  0.  018  cm"1  for  Nd  : YAG  (1%  concentra- 
tion). The  large  losses  for  Nd  : YV04  were  attributed  to 
scattering  by  the  iridium  platelets  in  the  crystal  which 
were  introduced  during  the  growth  process.3  A partial 
list  of  the  parameters  of  Nd  : YV04  (1%)  and  Nd  : YAG 
(1%)  crystals  used  in  this  paper  is  given  in  Table  I. 


FIG.  2.  Output  power  of  Nd  :YV04  (1%)  and  output  power  of 
Nd  :YAG  vs  absorbed  0.  5145-p  Input  power. 


FIG.  3.  Output  power  of  Nd  :YV04  (1%),  Nd  :YV04  (2%),  and 
Nd  :YAO  (1%)  vs  absorbed  0.  5145-p  Input  power. 


Comparison  of  the  laser  performance  of  Nd:YV04 
and  Nd  : YAG  with  optimum  output  mirrors  of  reflectivity 
of  67.6  and  84%,  respectively,  is  shown  in  Fig.  2.  The 
dashed  line  in  Fig.  2 is  obtained  by  assuming  a loss  co- 
efficient for  the  Nd  :YV04  sample  (heavy  solid  line)  equal 
to  that  of  the  Nd  : YAG  rod  and  is  illustrative  of  the  su- 
perior performance  of  Nd  : YV04  to  be  expected  with 
low-loss  material.  The  slope  efficiency  of  Nd  : YV04  at 
1.06  p (Fig.  2)  for  optimum  coupling  was  20%.  Some 
advantages  of  investigation  of  laser  properties  by  laser 
end  pumping  are  evident  by  the  well-controlled  perfor- 
mance and  the  exact  linearity  of  the  graphs  of  Figs.  2 
and  3.  When  the  laser  is  operated  close  to  threshold, 
the  output  power  of  the  laser  is  given  by* 

P = P9[(W/Wt1)  - l],  where  P is  output  power,  Pa  is  a 
constant  which  depends  upon  the  material  parameters, 

W is  the  pump  power  absorbed,  and  Wih  is  the  pump 
power  absorbed  at  threshold.  A difficulty  was  encoun- 
tered in  that  optical  feedback  produced  by  reflection  of 
pump  light  back  into  the  argon-ion  laser  made  optimum 
adjustment  of  the  apparatus  critical.  A Faraday  rotator 
is  currently  under  construction  which  will  isolate  the 
argon-ion  laser  from  the  test  laser  and  should  circum- 
vent this  difficulty  in  future  experiments. 

There  has  been  considerable  interest  in  the  develop- 
ment of  eye-safe  lasers,  and  this  consideration  prompted 
our  investigation  of  the  performance  of  Nd  : YV04  at  1. 34 
M.  Continuous -wave  operation  of  Nd  : YV04  at  1.  34  p was 
readily  achieved.  A comparison  of  the  cw  operation  of 
Nd  :YV04  (1  and  2%  samples)  and  Nd : YAG  (1%)  is  shown 
in  Fig.  3.  The  samples  used  in  Fig.  3 were  the  same  as 
in  Fig.  1,  except  for  the  2%  Nd : YV04  sample. 

The  experimental  arrangement  was  similar  to  that  of 
Fig.  1,  except  that  a 10  W argon -ion  laser  was  used  to 
provide  pump  power  at  0.  514  ji.  The  resonator  consist- 
ed of  a pair  of  plane-parallel  mirrors  both  of  99%  re- 
flectivity at  1.34  p which  were  specially  designed  for 
low  reflectivity  (less  than  10%)  at  1.06  ji,  thereby  sup- 
pressing oscillation  at  this  wavelength.  The  superiority 
of  the  Nd  : YV04  samples  is  evident  despite  .their  greater 


233 


J.  Appl.  Phys.,  Vol.  47.  No.  1,  January  1976 


Tucker  et  9f. 


233 


losses.  The  slope  efficiency  of  the  2 % Nd  : YV04  at  1.  34 
p was  7%. 

Work  is  in  progress  to  determine  the  loss  coefficient 
at  1.34  p and  to  measure  the  stimulated-emission  cross 
sections  of  Nd  : YV04  and  Nd  : YAG  at  1 . 34  p.  A prelimi- 
nary estimate  of  the  stimulated-emission  cross  section 
of  Nd : YV04  (1%)  at  1.  34  p (assuming  a A of  0. 16  cm'1) 
and  using  the  data  of  Fig.  3,  shows  that  it  is  consider- 
ably Larger  than  that  of  NdrYAG. 

In  adjustment  of  the  mirrors  of  the  Nd  : YV04  lasers, 
in  the  quasi-cw  mode  of  operation  at  1.06  p,  pulsed 
outputs,  in  several  instances,  were  observed.  The  YV04 
sample  was  misaligned  with  respect  to  the  resonator 
axis  by  about  25  arc  min  and  self-giant  pulsing  at  1. 06 
p was  readily  obtained.  Pulsewidths  of  40  ns  were  ob- 
served with  peak  powers  over  1000  times  greater  than 
the  cw  output  of  the  laser.  Self- giant  pulsing  was  ob- 


served at  1.34  p,  but  only  preliminary  observations 
were  obtained.  Self-Q-switched  operation  of  NdrYAG 
couid  not  be  achieved  under  the  same  conditions,  but 
had  been  observed  earlier  by  cooling  the  NdrYAG.7  The 
ease  of  self-Q-switching  the  Nd:YV04  evidently  stems 
from  the  higher  stimulated-emission  cross  sections. 


^.R.  O’Connor,  Appl.  Phys.  Lett.  9,  407  (1906). 

*M.  Baas,  L.G.  DeShazer,  and  U.  Ranon,  Report  No.  ECOM- 
74-0104-1,  1974  (unpublished). 

*A.M.  Chase  (private  communication). 

4D.  Findlay  andR.A.  Clay,  Phys.  Lett.  20,  277  (1966). 

*M.  Blmbaum  and  J.A.  Gelbwacha,  J.  Appl.  Phya.  43,  2335 
a 972). 

*G.  Blrnbauro,  Optical  Mas* r*  (Academic,  New  York,  1964), 
p.  90. 

tM.  Btrnbaum  and  C.L.  Fincher,  Proc.  IEEE  57,  804  (1969). 


234 


J.  Appl.  Phys.,  Vol  47.  No.  1,  January  1976 


Tucker  et  at. 


234 


DISTRIBUTION  LIST 


101  Defense  Documentation  Center 
ATTN:  DDC-TCA 

Cameron  Station  (Bldg  5) 

012  Alexandria,  VA  22314 

107  Director 

National  Security  Agency 
ATTN:  TDL 

001  Fort  George  G.  Meade,  MD  20755 

108  Director,  Defense  Nuclear  Agency 

ATTN:  Technical  Library 

001  Washington,  DC  20305 

200  Office  of  Naval  Research 
Code  427 

001  Arlington,  VA  22217 

201  Cdr,  Naval  Ship  Systems  Command 
Technical  Library,  Rm  3 S-08 
National  Center  No.  3 

001  Washington,  DC  20360 

205  Director 

Naval  Research  Laboratory 
ATTN:  Code  2627 

001  Washington,  DC  20375 

206  Commander 

Naval  Electronics  Lab  Center 
ATTN:  Library 

001  San  Diego,  CA  92152 

207  Commander 

US  Naval  Ordnance  Laboratory 
ATTN:  Technical  Library 

White  Oak,  Silver  Spring 
001  MD  20910 

210  Commandant,  Marine  Corps 

HQ,  US  Marine  Corps 
ATTN:  Code  LMC 

001  Washington,  DC  20380 

211  HQ,  US  Marine  Crops 

ATTN:  Code  INTS 

001  Washington,  DC  20380 

212  Cmd,  Control  & Communications 

Div  Development  Center 
Marine  Corps  Dev  & Educ  Cmd 
001  Quantico,  VA  22134 


Naval  Telecommunications  Command 
Tech  Library,  Code  422 
4401  Massachusetts  Avenue,  NW 
Washington,  DC  20390 

Naval  Research  Laboratory 
Code  6503,  LTPO 
Washington,  DC  20390 

Rome  Air  Development  Center 
ATTN:  Documents  Library  (TILD) 

Griffiss  A FB,  NY  13441 

HQ  ESD(XRRI) 

L.  G.  Hanscom  Field 
Bedford,  MA  01730 

A FSPCOMMCEN/SUR 
San  Antonio,  TX  78243 

Armament  Development  & Test  Ctr. 
ATTN:  DLOSL,  Tech  Library 

Eglin  Air  Force  Base,  FL  32  542 

HQ,  Air  Force  Systems  Command 
ATTN:  DLCA 

Andrews  Air  Force  Base 
Washington,  DC  20331 

Air  Force  Systems  Command 
Advanced  Systems  Div  (ASD/ENAD) 
Wright-Patter  son  A FB,  OH  45433 

Commander 
HQ,  TRADOC 
ATTN:  A TTNG-XO 
Ft  Monroe,  VA  23651 

HQDA  (DACE-CMS) 

Washington,  DC  20310 

OSASS  -RD 
Washington,  DC  20310 

Commander 

US  Army  Training  & Doctrine  Cmd 

ATTN:  ATCD-SI 

Fort  Monroe,  VA  23651 


215 

001 

220 

001 

301 

001 

307 

001 

312 

001 

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001 

314 

001 

320 

001 

401 

001 

403 

001 

405 

001 

406 

001 


(1) 


407 

001 

408 
001 

409 

001 

410 

001 

411 

001 

413 

001 

416 

004 

419 

001 

420 

001 

421 

002 

423 

001 


Commander 

US  Army  Training  & Doctrine  Cmd 

ATTN:  ATCD-CI 

Fort  Monroe,  VA  23651 

HQDA  (DARD-ARS-P/ 

Dr.  R.B.  Watson) 

Washington,  DC  20310 

Cdr,  US  Army  Materiel  Command 
ATTN:  AMCMA-EE 
5001  Eisenhower  Ave 
Alexandria,  VA  22333 

Cdr,  US  Army  Materiel  Command 
ATTN:  AMCRD-TP  (Dr.  B.  Zarwyn) 
5001  Eisenhower  Ave 
Alexandria,  VA  22333 

Cdr,  US  Army  Materiel  Command 
ATTN:  AMCRD-W 
5001  Eisenhower  Ave 
Alexandria,  VA  22333 

Cdr,  US  Army  Materiel  Command 
ATTN:  AMCRD-FW 
5001  Eisenhower  Ave 
Alexandria,  VA  22333 

Commander 

US  Army  R&D  Group  (Far  East) 

APO,  San  Francisco  96343 

Commander 

US  Army  Missile  Command 
ATTN:  AMSMI-RRA,  Bldg  7770 
Redstone  A rsenal,  AL  35809 

Commander 

US  Army  Missile  Command 
ATTN:  AMSMI-RR 

(Mr.  W.  B.  Jennings) 
Redstone  Arsenal,  AL  35809 

Cdr,  US  Army  Missile  Command 
Redstone  Scientific  Info  Center 
ATTN:  Chief,  Document  Section 

Redstone  A rsenal,  AL  35809 

Commander 

US  Army  Armament  Command 
ATTN:  AMSAR-RDP  (Library) 

Rock  Island,  IL  61201 


Commander 

US  Army  Aeromedical  Research  Lab 

ATTN:  Library 

Fort  Rucker,  AL  36362 

Commander 

Rock  Island  Arsenal 

ATTN:  SARRI-LP-L-Tech  Library 

Rock  Island,  IL  61201 

Commander,  Rock  Island  A rsenal 
US  Army  Armament  Command 
ATTN:  SWERI-RET-E 

(Dr.  L.  Gardner) 

Rock  Island  Arsenal,  IL  61201 

Cdr,  US  Army  Combined  Arms 
Combat  Developments  Activity 
ATTN:  A TCAIC-IE 
Fort  Leavenworth,  KS  66027 

Commander 

US  Army  Logistics  Center 
ATTN:  ATCL-MA 
Fort  Lee,  VA  23801 

Commander 

US  Army  Intelligence  School 

ATTN:  ATSIT-CTD 

Fort  Huachuca,  AZ  85613 

Cdr,  US  Army  Aviation  Systems  Cmd 
ATTN:  AMSAV-G 
PO  Box  209 
St.  Louis,  MO  63166 

Commander 

US  Army  Test  & Evaluation  Command 
ATTN:  A MSTE-D5-E  (Mr.  J.  Bialo) 
Aberdeen  Proving  Ground,  MD  21005 

Commandant 

US  Army  Engineer  School 
ATTN:  A TSE-CDT-DT-TL 
Fort  Belvoir,  VA  22060 

Commander 

Harry  Diamond  Laboratories 
ATTN:  A MX  DO-RCB,  Mr.  F.  Harris 
Washington,  DC  20438 


422 

424 

001 

425 

001 

427 

003 

429 

001 

431 

001 

433 

001 

434 

001 

436 

001 

441 

001 


(2) 


442  Commander 

Harry  Diamond  Laboratories 

ATTN:  Library 

2800  Powder  Mill  Road 

001  Adelphi,  MD  20783 

447  Cdr,  US  Army  Picatinny  Arsenal 
ATTN:  SMUPA-VC5 

Bldg  350 

001  Dover,  NJ  07801 

449  Commander 

Picatinny  Arsenal 
ATTN:  SARPA-TS-S  #59 

002  Dover,  NJ  07801 

451  Commander 

Frankford  Arsenal 

ATTN:  Dr.  Wm  McNeill,  PDS64-4 

001  Philadelphia,  PA  19137 

454  Cdr,  US  Army  Training  Device  Agcy 
ATTN:  AMXPG 

Naval  Training  Equipment  Center 

001  Orlando,  FL  32813 

456  Commander 

White  Sands  Missile  Range 
ATTN:  STEWS- R E - IO 

001  White  Sands  Missile  Range,  NM  88002 

458  Dir/Dev  & Engr 

Defense  Systems  Div 
ATTN:  SAREA -DE-DDR, 

H.  Tannenbaum 

002  Edgewood  A r senal,  APG,  MD  21010 

465  Commander 

Aberdeen  Proving  Ground 
ATTN:  STEAP-TL  (Bldg  305) 

002  Aberdeen  Proving  Ground,  MD  21005 

480  Commander 

USASA  Test  & Evaluation  Center 

001  Fort  Huachuca,  AZ  85613 

483  Cdr,  US  Army  Research  Ofc 
ATTN:  AMXRO-IP 
PO  Box  12211 

001  Research  Triangle  Park,  NC  27709 


484  Cdr,  US  Army  Research  Ofc 
ATTN:  AMXRO-PH  (Dr.  R.  J.  Lontz) 
PO  Box  1221  1 

001  Research  Triangle  Park,  NC  27709 

485  Cdr,  HQ  MASSTER 

Technical  Information  Center 
ATTN:  Mrs.  Ruth  Reynolds 

001  Fort  Hood,  TX  76544 

486  Commander 

US  Army  Mobility  Eqpt  R&D  Cen 
ATTN:  SMEFB-R 
001  Fort  Belvoir,  VA  22060 

488  US  Army  Security  Agency 

ATTN:  LARD 

Arlington  Hall  Station 

001  Arlington,  VA  22212 

489  Commander 

US  Army  Tank- A utomotive  Command 
ATTN:  AMSTA  -RW-L 
001  Warren,  MI  48090 

492  Commandant 

US  Army  Air  Defense  School 
ATTN:  C&S  Dept,  Msl  Sci  Div 
001  Fort  Bliss,  TX  79916 

496  Cdr,  US  Army  Combined  Arms 
Combat  Developments  Activity 
ATTN:  ATCACC 

001  Fort  Leavenworth,  KS  66027 

500  Commander 

US  Army  Yuma  Proving  Ground 
ATTN:  STEYP-MTD  (Tech  Library) 

002  Yuma,  AZ  85364 

501  Commander 

US  Army  Arctic  Test  Center 
ATTN:  STEAC-PL 
002  APO,  Seattle  98733 

502  CO,  US  Army  Tropic  Test  Center 
ATTN:  STETC-MO-A  (Tech  Library) 
Drawer  942 

001  Fort  Clayton,  Canal  Zone  09827 


(3) 


511 

001 

512 

001 

514 

001 

517 

001 

518 

001 

519 

001 

520 

001 

596 

002 

603 

001 

610 

001 


Commander 

US  Army  Nuclear  Agency 
Fort  Bliss,  TX  79916 

Directorate  of  Combat  Dev 
US  Army  Armor  School 
ATTN:  ATSB-CD-AA 
Fort  Knox,  KY  40121 

Commandant 

US  Army  Inst  for  Military 
Assistance 

ATTN:  A TSU-CTD-OMS 
Fort  Bragg,  NC  28307 

Commander 

US  Army  Missile  Command 
ATTN:  AMSMI-RE  (Mr.  Pittman) 
Redstone  Arsenal,  AL  35809 

Commander 

Harry  Diamond  Laboratories 
ATTN:  AMXDO-RCB 

(Dr.  J.  Nemarich) 
Washington,  DC  20438 

Commander 

US  Army  Systems  Analysis  Agency 
ATTN:  AMXSY-T  (Mr.  A.  Reid) 
Aberdeen  Proving  Ground,  MD 
21005 

Cdr,  Frankford  Arsenal 
ATTN:  SMUFA  -N-41  00 
Bldg  201 

Philadelphia,  PA  19137 

Commandant 
US  Army  Signal  School 
ATTN:  A TSN-CTD-MS 
Fort  Gordon,  GA  30905 

ECOM  Liaison  Office 

US  Army  Electronic  Proving  Ground 

Fort  Huachuca,  AZ  85613 

Director,  Night  Vision  Laboratory 
US  Army  Electronics  Command 
ATTN:  AMSEL-NV-D 
Fort  Belvoir,  VA  22060 


607  Commander 

US  Army  Tank -A utomotive  Cmd 
ATTN:  AMSTA-RHP,  Dr.  J.  Parks 
001  Warren,  MI  48090 

608  Director 

Night  Vision  Laboratory  (ECOM) 
ATTN:  AMSEL-NV-VIS 

(Mr.  L.  Gillespie) 

001  Fort  Belvoir,  VA  22060 

609  Director 

Night  Vision  Laboratory  (ECOM) 
ATTN; AMSEL-NV-SD  (Mr.  Gibson) 
001  Fort  Belvoir,  VA  22060 

614  Chief 

Ofc  of  Missile  Electronic  Warfare 
Electronic  Warfare  Lab,  ECOM 
001  White  Sands  Missile  Range 
NM  88002 

617  Chief 

Intel  Materiel  Dev  & Support  Ofc 
Electronic  Warfare  Lab,  ECOM 
001  Fort  Meade,  MD  20755 

680  Commander 

US  Army  Electronics  Command 
000  Fort  Monmouth,  NJ  07703 

1 AMSEL-  PP-I-PI 
1 AMSEL- PL-ST 
1 AMSEL- NL-D 
1 AMSEL- WL-D 
1 AMSEL- VL-D 
1 AMSEL-BL-D 
1 AMSEL-CT-L  (Dr.  R.  Buser) 

1 AMSEL-CT-LC  (Dr.  E.  Tebo) 

1 AMSEL-CT-L  (Mr.  B.  Louis) 

1 AMSEL-CT-LD  (Dr.  E.  Schiel) 

1 AMSEL-CT-LE 
(Dr.  H.  Hieslmair) 

4 AMSEL-CT-LD  (Mr.  J.  Strozyk) 
1 AMSEL-TL-D 
1 AMSEL-TL-I  (Dr.  H.  Jacobs) 

1 AMSEL-TL-B  (Mr.  M.  Zinn) 

1 AMSEL- TL-TG 
(Mr.  S.  Schneider) 

1 AMSEL-NL-R  -5 
(Dr.  E.  Dworkin) 


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701 

001 

703 

705 
002 

706 

002 

707 

001 

708 

001 

711 

001 


718 


001 

720 


001 

001 


ATTN:  Acquisitions  Br  (S-AK/DL) 

PO  Box  33 

College  Park,  MD  20740 

Advisory  Group  on  Electronic  Devices 
201  Varick  Street,  9th  Floor 
New  York,  NY  10014 

Advisory  Group  on  Electronic  Devices 
ATTN:  Secy,  Working  Group  D 
(Lasers) 

201  Varick  Street 
New  York,  NY  10014 

Target  Signature  Analysis  Center 
Env.  Research  Inst  of  Michigan 
PO  Box  618 
Ann  Arbor,  MI  48107 

Ballistic  Missile  Radiation  Anal  Cen 
Env.  Research  Inst  of  Michigan 
Box  618 

Ann  Arbor,  MI  48107 

Metals  and  Ceramics  Inf  Center 
Battelle 

505  King  Avenue 
Columbus,  OH  43201 


1 AMSEL-VL-E 
1 AMSEL-WL-N 

1 AMSEL-CT-L-D  (Ofc  of  Record) 

1 AMSEL-MA-MP 

2 AMSEL-MS-TI 

1 AMSEL-GG-TD 

2 AMSEL-PA 

1 A MCPM-  TDS-SE 
1 USMC-LNO 
1 AMSEL-RD 
1 TRADOC-LNO 
1 AMSEL-CG  (Mr.  Doxey) 

25  Originating  Office 

MIT- Lincoln  Laboratory 
ATTN:  Library  - Rm  A-082 
PO  Box  73 

Lexington,  MA  02173 

NASA  Scientific  & Technical 
Information  Facility 


TACTEC 

Battelle  Memorial  Institute 
505  King  Avenue 
Columbus,  OH  43201 

Thermophysical  Properties 
Res  Center 
Purdue  University, 
Research  Park 
2595  Yeager  Road 
Lafayette,  IN  47906 

Airtron  Division, 

Litton  Industries 

Dr.  R.  Belt 

200  East  Hanover  Ave. 

Morris  Plains,  NJ  07950 


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